| PART |
Description |
Maker |
| BFC12 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC45 |
4TH GENERATION MOSFET
|
Seme LAB
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| USB2602 |
(USB2601 / USB2602) 4th Generation USB2.0 Flash Media Controller
|
SMSC Corporation
|
| PICO880PGA-2980U PICO880PGA-I7 PICO880PGA-I3 PICO8 |
4th Generation Intel Core i7/i5/i3 and Celeron processor Pico ITX SBC with DP/ LVDS, 1 GE Audio
|
Axiomtek Co., Ltd.
|
| USB2601 USB2602-NU-03 USB2601-NE-03 USB2601-NU-03 |
4TH GENERATION USB2.0 FLASH MEDIA CONTROLLER WITH INTEGRATED CARD POWER FETS AND HS HUB
|
SMSC[SMSC Corporation]
|
| USB2602-NU-XX USB2601 USB2601_06 USB2601-NE-XX USB |
4th Generation USB2.0 Flash Media Controller with Integrated Card Power FETs and HS Hub
|
SMSC[SMSC Corporation]
|
| GT60J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| GT50J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
|
TOSHIBA
|
| GT50G321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
|
TOSHIBA
|
| PS22056 PS2205612 |
Dual-In-Line Package Intelligent Power Module
1200V/25A low-loss 4th generation IGBT inverter bridge
|
Mitsubishi Electric Semiconductor
|
| PS21353-N |
DIP - IPM
600V/10A low-loss 4th generation (planar) IGBT inverter bridge for 3 phase DC-to-AC power conversion.
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
