| PART |
Description |
Maker |
| SUP65P06-20 SUB65P06-20 |
From old datasheet system
P-Channel Enhancement-Mode Trans
P-Channel 60-V (D-S), 175C MOSFET
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,65A I(D),TO-220AB
P-Channel MOSFET
30V N-Channel PowerTrench MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology Inc
Vishay Intertechnology,Inc.
|
| FDA24N50 |
500V N-Channel MOSFET N-Channel MOSFET; Package: TO-3PN; No of Pins: 3; Container: Rail 24 A, 500 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel MOSFET 500V, 24A, 0.19ヘ
N-Channel MOSFET 500V, 24A, 0.19Ω
|
Fairchild Semiconductor, Corp.
|
| MIC94030 MIC94030BM4 MIC94031BM4 4030B MIC94031 |
TinyFET P-Channel MOSFET(TinyFET???P娌??澧?己??OS?烘?搴??)
TinyFETP-Channel MOSFET Preliminary Information TinyFETP沟道MOSFET的初步信
10000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
TinyFET P-Channel MOSFET(TinyFET技P沟道增强型MOS场效应管)
TinyFET P-Channel MOSFET Preliminary Information
TinyFET⑩ P-Channel MOSFET Preliminary Information
TinyFET?/a> P-Channel MOSFET Preliminary Information
|
Micrel Semiconductor, Inc.
Micrel Semiconductor,Inc.
MICREL[Micrel Semiconductor]
|
| FDP100N10 |
N-Channel PowerTrenchMOSFET 75 A, 100 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel PowerTrench㈢ MOSFET
N-Channel PowerTrench? MOSFET
|
Fairchild Semiconductor, Corp.
|
| IRFP443R IRFF430R IRF731R IRF732R IRFP442R IRFP342 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 500MA I(D) | TO-250VAR
Rugged Series Power MOSFETs - N-Channel
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.75A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7.7A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 8.7A I(D) | TO-247AC
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 10A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.3A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6.8A I(D) | TO-247 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 6.8AI（四）|47
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.4A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 5.4AI（四）|04AA
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 4A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.25A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 450V五（巴西）直| 2.25AI（四）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 1.35A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 1.35AI（四）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4A I(D) | TO-204AA
|
International Rectifier, Corp.
Intersil, Corp.
Infineon Technologies AG
Fairchild Semiconductor, Corp.
|
| FDB2572 FDP2572 FDB2572NL |
N-Channel PowerTrench MOSFET 150V, 29A, 54mз 4 A, 150 V, 0.054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
150V N-Channel UltraFET Trench MOSFET 29A, 0.056 Ohms @ VGS = 10V, TO-263/D2PAK Package 4 A, 150 V, 0.054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-Channel PowerTrench MOSFET 150V/ 29A/ 54m
N-Channel PowerTrench MOSFET 150V, 29A, 54m蟹
N-Channel PowerTrench MOSFET 150V, 29A, 54m?/a>
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FDN342P |
P-Channel 2.5V Specified PowerTrench MOSFET
TRANSISTOR|MOSFET|P-CHANNEL|20VV(BR)DSS|2AI(D)|TO-236AB
P-Channel 2.5V Specified PowerTrench⑩ MOSFET
|
Fairchild Semiconductor
|
| SUP75N05-06 SUB75N05-06 |
N-Channel 50-V (D-S), 175C MOSFET
N-Channel MOSFET
N-Channel 50-V (D-S), 175C MOSFET
N-Channel Enhancement-Mode Trans
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp.
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| STD2NB80 6424 STD2NB80T4 |
From old datasheet system
N-CHANNEL MOSFET
N - CHANNEL 800V - 4.6 ohm - 1.9A - IPAK/DPAK PowerMESH MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 1.9A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 800V的五（巴西）直| 1.9AI（四）|52AA
|
SGS Thomson Microelectronics
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| SUB75N08-10 SUP75N08-10 |
N-Channel Enhancement-Mode Trans
N-Channel 75-V (D-S), 175C MOSFET
N-Channel 75-V (D-S), 175 Degrees Celcious MOSFET
N-Channel 75 N通道75
|
VISAY[Vishay Siliconix]
Vishay Intertechnology, Inc.
|
