| PART |
Description |
Maker |
| OM6407SD OM6406SD OM6408SD OM6405SD |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | FP
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | FP
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 400V五（巴西）直| 5.5AI（四）|计划生育
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 100V的五（巴西）直| 8A条（丁）|计划生育
|
Mitsubishi Electric, Corp.
|
| TB62004FW B62006F TB62003FW TB62008F TB62008FW TB6 |
8CH DMOS TRANSISTOR ARRAY WITH GATE THROUGH & DMOS DRIVER
Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC 8CH DMOS TRANSISTOR ARRAY WITH GATE
8CH DMOS TRANSISTOR ARRAY WITH GATE INVERTER & DMOS DRIVER
8CH DMOS TRANSISTOR ARRAY WITH GATE NOR & DMOS DRIVER
8CH DMOS TRANSISTOR ARRAY WITH GATE NAND & DMOS DRIVER
|
TOSHIBA
|
| AP0130 AP0130NA AP0130NB AP0130ND AP0132ND AP0132N |
ER 7C 7#16S PIN RECP
AB 5C 5#12 PIN RECP
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 15 mA, 320 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 8通道阵列单片功率MOSFET N沟道增强模式
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 15 mA, 160 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 15 mA, 300 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 200 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
AB 5C 5#12 SKT RECP 8通道阵列单片功率MOSFET N沟道增强模式
|
SUTEX[Supertex Inc]
Supertex Inc
SUTEX[Supertex, Inc]
Supertex, Inc.
|
| UPA1601 UPA1601GS UPA1601CX |
Power MOS FET array
UPA1601DataSheet|DataSheet[03/1994]
MONOLITHIC POWER MOSFET ARRAY
|
NEC
|
| ALD1116DA ALD1106SB ALD1106DB ALD1106 ALD1106PB AL |
QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY
Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:22-35 RoHS Compliant: No
TRANS NPN 40VCEO 10A TO-220F 双N沟道MOSFET的阵列匹
QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY 双N沟道MOSFET的阵列匹
|
ALD[Advanced Linear Devices]
Advanced Linear Devices, Inc.
|
| PE84140_06 84140-00 84140-01 84140-02 PE84140 PE84 |
Ultra-High Linearity Broadband Quad MOSFET Array 0 MHz - RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array
|
Peregrine Semiconductor, Corp.
PEREGRINE[Peregrine Semiconductor Corp.]
|
| NSF20504 NSF205023 NSF20607 NSFM150 NSFM250 NSFM35 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 7A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 700V V(BR)DSS | 7A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 15A I(D) | TO-254 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 15A条（丁）|254
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 24A I(D) | TO-254 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 24A条（丁）|254
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-254 晶体管| MOSFET的| N沟道| 100V的五（巴西）直|5A条（丁）|254
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 9A I(D) | TO-254 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 9A条（丁）|254
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | TO-254 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 24A条（丁）|254
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-254
|
Sharma Electro Components, Inc.
|
| IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 8A条（丁）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 4.9AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 1A条（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 28A条（丁）|04AE
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五（巴西）直| 600毫安（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五（巴西）直|5A条（丁）|04AE
|
Black Box, Corp.
Bourns, Inc.
Vishay Intertechnology, Inc.
Samsung Semiconductor Co., Ltd.
3M Company
|
| M54522P11 M54522FP M54522P |
400 mA, 40 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| HS0-6254RH-Q HS1-6254RH HS-6254RH 5962F9764101VXC |
Radiation Hardened Ultra High Frequency
NPN Transistor Array(抗辐射甚高频NPN晶体管阵
1500PF 50V 0805
BJT
Radiation Hardened Ultra High Frequency NPN Transistor Array 辐射加固超高频NPN晶体管阵
|
Intersil Corporation
Intersil, Corp.
|
| CA3096AE CA3096CE |
TRANSISTOR,BJT,ARRAY,INDEPENDENT,40V V(BR)CEO,50MA I(C),DIP
TRANSISTOR,BJT,ARRAY,INDEPENDENT,24V V(BR)CEO,50MA I(C),DIP
From old datasheet system
|
Intersil Corp
|
