| PART |
Description |
Maker |
| AMFW-7S-122128-100P2 AMFW-7S-117128-65B AMFW-5S-12 |
8000 MHz - 8400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
3700 MHz - 4200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
7250 MHz - 7750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
9600 MHz - 9800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
12200 MHz - 12750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
11700 MHz - 12750 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
12200 MHz - 12750 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
7200 MHz - 7800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
11400 MHz - 12200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| BFP280W |
NPN Silicon RF Transistor for low noi...
|
Infineon
|
| BFP280 |
NPN Silicon RF Transistor for low noi...
|
Infineon
|
| AFS5-10951175-09-10P-5 AFS42-04400510-07-10P-44 AF |
10950 MHz - 11750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
4400 MHz - 5100 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
2200 MHz - 2300 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
1400 MHz - 1700 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
6700 MHz - 7100 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
700 MHz - 800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
7900 MHz - 8400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| SY10EL34 SY10EL34LZC SY10EL34LZCTR SY10EL34ZC SY10 |
5V/3.3V ÷2,÷4,÷8 Clock Generation Chip(5V/3.3V ÷2,÷4,÷8时钟发生芯片) 5V/3.3V ÷ 2，4，8时钟发生器芯片（5V/3.3V ÷ 2，4，8时钟发生芯片
LED 2MM QUAD YELLOW 10EL SERIES, LOW SKEW CLOCK DRIVER, 3 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO16
5V/3.3V /2 /4 /8 CLOCK GENERATION CHIP
5V/3.3V ±2, ±4, ±8 CLOCK GENERATION CHIP
5V/3.3V 2, 4, 8 CLOCK GENERATION CHIP
5V/3.3V ÷2, ÷4, ÷8 CLOCK GENERATION CHIP
|
Micrel Semiconductor, Inc.
MICREL[Micrel Semiconductor]
|
| APT100GF60JRD |
The Fast IGBTis a new generation of high voltage power IGBTs. ⑩的快速IGBT是一种高压IGBT的新一代
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Fast IGBT & FRED 600V 140A
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| ANP1800M2-23 L735A L1300 ANP2300M12-10 |
1700 MHz - 1800 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER HERMETIC SEALED, CASE S003
735 MHz - 765 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
1215 MHz - 1365 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
2200 MHz - 2300 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
Sumida, Corp.
|
| APT60GT60JRD |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
Thunderbolt IGBT & FRED 600V 90A
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
|
Advanced Power Technology
|
| STD7NM50N-1 STP7NM50N STF7NM50N STD7NM50N |
N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET
N-channel 500V - 0.70楼? - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh垄芒 Power MOSFET
N-channel 500V - 0.70ヘ - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| APT50M50L2FLL |
POWER MOS 7 500V 89A 0.050 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology, Ltd.
|
| APT5010B2FLL APT5010LFLL APT5010B2 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 500V 46A 0.100 Ohm
|
Advanced Power Technology, Ltd.
|
