| PART |
Description |
Maker |
| SST37VF512 |
(SST37VFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
|
Silicon Storage Technology
|
| M29W064FB70N3E M29W064FB70N3F M29W064FT90N3E M29W0 |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
| M29W064FB90N3E M29W064FB90N3F M29W064FT |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
| NAND128W3A2BN6 NAND01BGR3A NAND01BGR3A0AN1T NAND01 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| VS28F016SV MS28F016SV |
16-Mbit (1-Mbit x 16/ 2-Mbit x 8) FlashFileTM MEMORY
16-Mbit FlashFileTM MEMORY
16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFileTM MEMORY 16兆位兆位× 16兆位× 8FlashFileTM记忆
|
Intel Corporation
Intel Corp.
Intel, Corp.
|
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
| DT28F016SA-100 DT28F016SA-150 DA28F016SA-080 E28F0 |
28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
|
INTEL[Intel Corporation]
|
| DA28F016XS15 E28F016XS20 28F016XS DA28F016XS-15 DA |
16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
|
INTEL[Intel Corporation]
|
| SST37VF512_06 SST37VF010 SST37VF010-70-3C-NH SST37 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash
|
Silicon Storage Technol...
SST[Silicon Storage Technology, Inc]
Silicon Storage Technology, Inc.
http://
|
| LH28F016SANS-70 LH28F016SANS |
Flash Memory
16 Mbit(1 Mbit x 16, 2 Mbit x 8)
|
SHARP[Sharp Electrionic Components]
|
