| PART |
Description |
Maker |
| IRG4PC50F IRG4PC50F-E |
70 A, 600 V, N-CHANNEL IGBT, TO-247AC
70 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
| APT6017WVR |
POWER MOS V 600V 31.5A 0.170 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT6015B2VR APT6015 |
POWER MOS V 600V 38A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6030 APT6030BVFR |
POWER MOS V 600V 21A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6011B2VR APT6011LVR |
POWER MOS V 600V 49A 0.110 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
| APT6010JLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 47A 0.100 Ohm
|
Advanced Power Technology
|
| APT60M75L2LL |
POWER MOS 7 600V 73A 0.075 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| APT6015JN APT6018JN |
POWER MOS IV 600V 38.0A 0.15 Ohm / 600V 35.0A 0.18 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| AOD7S60 |
600V 7A a MOS Power Transistor
|
Alpha & Omega Semiconductors
|
| AOT4S60 |
600V 4A a MOS TM Power Transistor
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| AOD7S60 |
600V 7A a MOS TM Power Transistor
|
ShenZhen FreesCale Electronics. Co., Ltd
|
