| PART |
Description |
Maker |
| 2SD1664 2SD1858 A5800362 2SD1664P 2SD1664T100Q 2SD |
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
Medium Power Transistor (32V/ 1A)
Medium Power Transistor (32V, 1A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Littelfuse
Rohm CO.,LTD.
ROHM[Rohm]
|
| 2SB1182 2SB1188 2SB822 2SB911M 2SB1240 A5800350 2S |
From old datasheet system
Medium power Transistor(-32V/ -2A)
Medium power Transistor(-32V, -2A) 中等功率晶体管（- 32V的，- 2A型）
|
Rohm Co., Ltd.
|
| 2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132 |
Medium Power Transistor 中等功率晶体
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62
From old datasheet system
Medium Power Transistor (-32A,-1A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
| 2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A)
Medium Power Transistor (?32V,?1A)
Power Transistor (?60V, ?3A)
Low-frequency Transistor (-80V, -0.5A)
Power Transistor (?80V, ?1A)
Low VCE(sat) Transistor (?20V, ?3A)
Power transistor (?20V, ?2A)
General purpose amplification (?30V, ?1A)
Low frequency amplifier
Medium power transistor (−60V, −0.5A)
|
ROHM[Rohm]
|
| 2SB1240 2SB1182 2SB1188 |
Medium power Transistor(-32V, -2A)
|
ROHM[Rohm]
|
| 2SD1781K08 |
Medium Power Transistor (32V, 0.8A)
|
Rohm
|
| L2SD1781KQLT3G L2SD1781KQLT1G L2SD1781KQLT1G11 L2S |
Medium Power Transistor (32V, 0.8A) High current capacity in compact
|
Leshan Radio Company
|
| 2SB1132 2SB1132L-X-TN3-T 2SB1132L-P-AB3-R 2SB1132L |
MEDIUM POWER TRANSISTOR 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252
MEDIUM POWER TRANSISTOR 中功率晶体管
|
??『绉???′唤??????
UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| T1G4003532-FS-15 |
35W, 32V, DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T1G4004532-FLEVB1 T1G4004532-FL-15 |
45W, 32V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| ACY11 ACY14 ACY17 ACY18 ACY19 AC117 AC130 AC126 AC |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-1
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 1A I(C) | TO-1
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-1
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 500MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 200MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1.2A I(C) | TO-1
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | CAN
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | CAN
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 1A I(C) | TO-1
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 1A I(C) | CAN
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 15V的五（巴西）总裁| 500mA的一（c）|
TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 200MA I(C) 晶体管|晶体管|进步党| 18V的五（巴西）总裁| 200mA的我（丙
|
Electronic Theatre Controls, Inc.
IDEC, Corp.
|
