PART |
Description |
Maker |
2673000701 |
Lower Frequencies < 50 MHz
|
Fair-Rite Products Corp.
|
BLF6G27LS-75 BLF6G27-75 |
Product description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz WiMAX power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. BLF6G27-75<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
2643004701 |
Broadband Frequencies 25-300 MHz
|
Fair-Rite Products Corp.
|
BAR16-1 BAR15-1 BAR14-1 |
RF switch, RF attenuator for frequencies above 10 MHz
|
Infineon Technologies A...
|
2661021801 |
Higher Frequencies 250-1000 MHz
|
Fair-Rite Products Corp.
|
2661000701 |
Higher Frequencies 250-1000 MHz
|
Fair-Rite Products Corp.
|
AP6970GN2-HF AP6970GN2-HF-14 |
Bottom Exposed DFN, Lower Profile Lower Gate Charge
|
Advanced Power Electronics Corp. Advanced Power Electron...
|
CA3127E CA3127F CA3127H |
High-freguency N-P-N transistor array. For low-power applications at frequencies up to 500 MHz.
|
General Electric Solid State
|
BLF7G27LS-100 BLF7G27L-100 |
Power LDMOS transistor 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
|
NXP Semiconductors N.V.
|
CLY15 Q62702-L99 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管(功率放大器,对于00兆赫2.5千兆赫频率的移动电话 From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
BLF6G27LS-40P BLF6G27L-40P |
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BAR61 BAR60 Q62702-A786 Q62702-A120 |
Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) SILICON, PIN DIODE From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|