| PART |
Description |
Maker |
| 2673000701 |
Lower Frequencies < 50 MHz
|
Fair-Rite Products Corp.
|
| 2643002201 |
Broadband Frequencies 25-300 MHz
|
Fair-Rite Products Corp.
|
| BAR16-1 BAR15-1 BAR14-1 |
RF switch, RF attenuator for frequencies above 10 MHz
|
Infineon Technologies A...
|
| 2643000801 |
Broadband Frequencies 25-300 MHz
|
Fair-Rite Products Corp.
|
| 2661022401 |
Higher Frequencies 250-1000 MHz
|
Fair-Rite Products Corp.
|
| BLM6G22-30 BLM6G22-30G |
Product description30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1).
|
NXP Semiconductors N.V.
|
| AD6649 AD6649BCPZ AD6649BCPZRL7 AD6649EBZ |
IF Diversity Receiver IF sampling frequencies to 400 MHz
|
Analog Devices
|
| BLF7G22LS-100P |
Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| CLY15 Q62702-L99 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管（功率放大器，对于00兆赫2.5千兆赫频率的移动电话
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BAR61 BAR60 Q62702-A786 Q62702-A120 |
Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) SILICON, PIN DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
