| PART |
Description |
Maker |
| 2643022401 |
Broadband Frequencies 25-300 MHz
|
Fair-Rite Products Corp.
|
| 2643001501 |
Broadband Frequencies 25-300 MHz
|
Fair-Rite Products Corp.
|
| 2643000801 |
Broadband Frequencies 25-300 MHz
|
Fair-Rite Products Corp.
|
| 2643020501 |
Broadband Frequencies 25-300 MHz
|
Fair-Rite Products Corp.
|
| 2661000301 |
Higher Frequencies 250-1000 MHz
|
Fair-Rite Products Corp.
|
| 2661000801 |
Higher Frequencies 250-1000 MHz
|
Fair-Rite Products Corp.
|
| 2661022401 |
Higher Frequencies 250-1000 MHz
|
Fair-Rite Products Corp.
|
| BAR15 BAR16 BAR14 |
RF switch RF attenuator for frequencies above 10 MHz Low distortion factor
|
TY Semiconductor Co., Ltd
|
| BLF6G27S-4508 BLF6G27S-45 BLF6G27-45 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
WiMAX power LDMOS transistor
|
NXP Semiconductors N.V.
|
| CLY10 Q62702-L94 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管（功率放大器，对于00兆赫2.5千兆赫频率的移动电话
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
