| PART |
Description |
Maker |
| 1N5393GP 1N5399GP 1N5391GP 1N5392GP 1N5394GP 1N539 |
Glass Passivated Junction Rectifier(????荤?缁???存???
Glass Passivated Junction Rectifier(钝化玻璃结型整流 结玻璃钝化整流（钝化玻璃结型整流器）
GLASS PASSIVATED JUNCTION RECTIFIER 玻璃钝化整流
|
GE Security, Inc.
GE[General Semiconductor]
|
| MP1510 MP1505 MP1507 MP1503 MP154 MP158 MP151 MP15 |
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 15 Amperes) 单相玻璃钝化硅桥式整流器（电压范50000伏特，电流十五安培）
(MP1505 - MP1510) SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER
(MP151 - MP1510) SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER
|
RECTRON[Rectron Semiconductor]
|
| S3K-13 S3MB |
Glass Passivated Die Construction
3.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
|
Diodes Incorporated
|
| 1N4944GP 1N4946GP 1N4947GPE 1N4944GPE/4G 1N4942GP |
1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
Diodes
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 600V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 400V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 200V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 1000V
|
Vishay Beyschlag
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| GL34M GL34A GL34B GL34D GL34G GL34J GL34K |
From old datasheet system
MINI-MELF glass passivated junction Diodes - Silicon passivated type
|
FORMOSA[Formosa MS]
|
| MURS260-A |
Super Fast Recovery Pack: SMA
SURFACE MOUNT ULTRAFAST GLASS PASSIVATED RECTIFIER VOLTAGE拢潞600V CURRENT拢潞 2.0A
SURFACE MOUNT ULTRAFAST GLASS PASSIVATED RECTIFIER VOLTAGE?00V CURRENT 2.0A
|
Gulf Semiconductor
|
| ZGL41 ZGL41-130A ZGL41-200 ZGL41-200A ZGL41-100 ZG |
Surface Mount Glass Passivated Zeners 表面安装玻璃钝化齐纳基准
Surface Mount Glass Passivated Zeners Steady State Power 1.0W
|
GE Security, Inc.
VAISH[Vaishali Semiconductor]
Vishay
|
| EGP10A- EGP10K EGP10A EGP10B EGP10C EGP10D EGP10F |
-1.0 Ampere Glass Passivated High Efficiency Rectifiers
1.0 Ampere Glass Passivated High Efficiency Rectifiers(平均整流电流1.0安培高效率玻璃钝化整流器) 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
