| PART |
Description |
Maker |
| MGF0919A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0907B MGF0907B11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0915A MGF0915A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0953P11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0921A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| NE8500100 NE8500100-RG NE8500100-WB NE500100 NE500 |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp. NEC[NEC]
|
| MGF0905A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L /S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| FLL2400IU-2C |
L-Band High Power GaAs FET
|
Fujitsu Component Limited. Fujitsu Media Devices Limited
|
| FLL1200IU- FLL1200IU-3 |
L-Band High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. Eudyna Devices Inc
|
| FLL810IQ-3C |
L-BAND HIGH POWER GAAS FET
|
Eudyna Devices Inc
|