| PART |
Description |
Maker |
| IDW40G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDY10S120 |
2nd Generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
| IDH09SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
| IDH08SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
| IDY15S120 |
2nd Generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
| IDT04S60C08 |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
| IDT05S60C08 |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG Infineon Technologies A...
|
| IDH05SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
| IDC08S60C |
2nd generation thinQ! SiC Schottky Diode
|
Infineon Technologies
|
| IDD04S60C |
2nd Generation thinQ SiC Schottky Diode 2nd Generation thinQ! SiC Schottky Diode
|
INFINEON[Infineon Technologies AG]
|