| PART |
Description |
Maker |
| W3HG128M64EEUXXXD4ISG W3HG128M64EEUXXXD4IMG W3HG12 |
1GB - 128Mx64 DDR2 SDRAM UNBUFFERED, SO-DIMM
|
http://
White Electronic Design...
|
| HYMD5126468 HYMD512646L8 |
128Mx64|2.5V|K/H/L|x16|DDR SDRAM - Unbuffered DIMM 1GB 128Mx64 | 2.5V的| /升| x16 | DDR SDRAM无缓冲DIMM 1GB
|
Lattice Semiconductor, Corp.
|
| HYMP564S648-E3 HYMP564S648-C4 HYMP532S646-E3 HYMP5 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver.
DDR2 SDRAM - SO DIMM 256MB
DDR2 SDRAM - SO DIMM 512MB
DDR2 SDRAM - SO DIMM 1GB
|
HYNIX[Hynix Semiconductor]
|
| W3EG72125S335AJD3 W3EG72125S202JD3 W3EG72125S263AJ |
1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL 1GB 2x64Mx72 ECC的DDR SDRAM的注册瓦锁相
|
Amphenol, Corp.
Toshiba, Corp.
|
| HY5PS1G431LF-C4 HY5PS1G431LF-C5 HY5PS1G831LF-C4 HY |
1Gb DDR2 SDRAM 256M X 4 DDR DRAM, 0.45 ns, PBGA68
1Gb DDR2 SDRAM 128M X 8 DDR DRAM, 0.45 ns, PBGA68
1Gb DDR2 SDRAM 256M X 4 DDR DRAM, 0.5 ns, PBGA68
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HY5PS1G421LM-Y5 HY5PS1G821LM-Y5 HY5PS1G421LM-Y6 HY |
DDR2 SDRAM - 1Gb
|
Hynix Semiconductor
|
| EBE11UE6ACSA-8G-E EBE11UE6ACSA-6E-E EBE11UE6ACSA-8 |
1GB DDR2 SDRAM SO-DIMM
|
Elpida Memory
|
| K4T1G164QE K4T1G044QE K4T1G084QE |
1Gb E-die DDR2 SDRAM
|
Samsung Electronics
|
| K4T1G044QE |
1Gb E-die DDR2 SDRAM
|
Samsung semiconductor
|
| K4T1G164QM-ZCD5 K4T1G044QM K4T1G044QM-ZCCC K4T1G04 |
1Gb M-die DDR2 SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4T1G084QM-ZCCC K4T1G084QM-ZCD5 K4T1G044QM-ZCCC K4 |
1Gb M-die DDR2 SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
