| PART |
Description |
Maker |
| GA200SA60S |
600V DC-1 kHz (Standard) Single IGBT in a SOT-227 package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| UGF1004GD |
10 Ampere Insulated Tandem Polarity Ultra Fast Recovery Half Bridge Rectifiers
|
Thinki Semiconductor Co...
|
| DF1-PD2428SCFB DF1B-10S-2.5R DF1B-11S-2.5R DF1B-12 |
MOSFET N-CH 600V 36A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
MOSFET N-CH 1KV 24A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
MOSFET N-CH 1KV 36A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
MOSFET N-CH 500V 44A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
MOSFET N-CH 500V 80A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
2.5mm Pitch Connector for Discrete Wire Connection (Product Compliant with UL/CSA Standard) 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
CAT6 SOL PC PVC BLU 50FT PVC SOLID PATCH CORD
MOSFET N-CH 500V 48A SOT-227B
MOSFET N-CH 200V 180A SOT-227B
MOSFET N-CH 300V 130A SOT-227B
MOSFET N-CH 500V 64A SOT-227
MOSFET N-CH 70V 200A SOT-227B
|
http://
HIROSE ELECTRIC Co., Ltd.
Hirose Electric USA, INC.
HIROSE[Hirose Electric]
|
| HFA120EA60 HFA120FA60 |
600V 60A HEXFRED Discrete Diode in a SOT-227 package
HEXFREDTM Ultrafast, Soft Recovery Diode
|
IRF[International Rectifier]
|
| BUZ901X4S MNT-LC32030-C4 |
32 A, 200 V, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET SOT-227, 4 PIN
32 A, 200 V, N AND P-CHANNEL, Si, POWER, MOSFET SMARTPACK-10
|
TT electronics Semelab, Ltd.
|
| SA120FA60 |
FAST RECOVERY RECTIFIER DIODE
600V Fast Recovery Diode in a SOT-227 package
|
IRF[International Rectifier]
|
| ADM6348-44ARTZ-R7 ADM6348-43ARTZ-R7 ADM6346-46ARTZ |
Ultralow Power, 3-Lead, SOT-23, Microprocessor Reset Circuit, Active-Low Open-Drain Output, 0.5 A Supply Current; Package: SOT-23-3; No of Pins: 3; Temperature Range: Industrial 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO3
1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO3 ROHS COMPLIANT, TO-236AB, SOT-23, 3 PIN
Ultralow Power, 3-Lead, SOT-23 Microprocessor Reset Circuits
|
ANALOG DEVICES INC
Analog Devices, Inc.
|
| STTH1008DTI |
800 V tandem hyperfast diode
|
STMicroelectronics
ST Microelectronics
|
| 227 |
CTS 227 Rotary Switches
|
CTS Corporation
|
| CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
|
| STTH806D |
TANDEM 600V HYPERFAST BOOST DIODE
|
ST Microelectronics
|
| STTH806DTI |
Tandem 600V HYPERFAST BOOST DIODE
|
STMicroelectronics
|
