| PART |
Description |
Maker |
| CY7C1992CV18-200BZC CY7C1992CV18-200BZI CY7C1992CV |
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
512K X 36 DDR SRAM, 0.45 ns, PBGA165
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1394JV18-300BZC CY7C1394JV18-300BZI CY7C1394JV |
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1522KV18 |
72-Mbit DDR II SIO SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1392BV18-167BZC CY7C1392BV18-167BZI CY7C1392BV |
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1422AV18-167BZXC CY7C1423AV18 CY7C1423AV18-167 |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
Cypress
|
| CY7C1250V18-300BZI CY7C1246V18-333BZI CY7C1246V18- |
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) 36兆位的DDR - II SRAM2字突发架构（2.0周期读写延迟
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) 1M X 36 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1420BV18-250BZC |
36-Mbit DDR-II SRAM 2-Word Burst Architecture 1M X 36 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1318CV18-200BZXC |
18-Mbit DDR-II SRAM 2-Word Burst Architecture 1M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CY7C1277V18-300BZC CY7C1266V18-300BZXC CY7C1266V18 |
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 4M X 9 DDR SRAM, 0.45 ns, PBGA165
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 4M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1416AV18-167BZXI CY7C1416AV18-167BZC CY7C1416A |
36-Mbit DDR-II SRAM 2-Word Burst Architecture 2M X 18 DDR SRAM, 0.5 ns, PBGA165
36-Mbit DDR-II SRAM 2-Word Burst Architecture 2M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
