| PART |
Description |
Maker |
| K9F5608D0D-PCB00 K9F5608X0D |
32M x 8 Bit NAND Flash Memory
32M X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Samsung semiconductor
|
| MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的（x 8/x16）闪
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73
Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes
CONN, M HEADER ST 1X2 .230
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| MX29LA320MTXBC-90G MX29LA321MTXCC-70R MX29LA320MBX |
32M-BIT [4M x 8/2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 2M X 16 FLASH 3V PROM, 90 ns, PBGA48
|
Macronix International Co., Ltd.
http://
|
| MX29LA321MHTC-90G MX29LA321MLTI-90 |
32M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY 2M X 16 FLASH 3V PROM, 90 ns, PDSO56
|
Macronix International Co., Ltd.
|
| K9F5608U0M-YCB0 K9F5608U0M-YIB0 |
32M x 8 Bit NAND Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YI |
32M x 8 Bit NAND Flash Memory
|
Samsung Electronic
Samsung semiconductor
|
| W25Q32BV W25Q32BVSSAG W25Q32BVDAAP W25Q32BVZPAP W2 |
3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
32M X 1 SPI BUS SERIAL EEPROM, PDSO16
|
WINBOND ELECTRONICS CORP
|
| MX29LV320CBXBC-70G MX29LV320CBXBC-90G MX29LV320CTX |
32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
http://
|
| MC-222262F9-B85X-BT3 MC-222262-X |
MCP(32M-bit flash memory 8M-bit Low Power SRAM)
|
NEC
|
| MC-222254AF9-B85X-BT3 MC-222254A-X |
MCP(32M-bit flash memory 4M-bit Low Power SRAM)
|
NEC
|
| MC-222244AF9-B85X-BT3 MC-222244A-X |
MCP(32M-bit flash memory 4M-bit Low Power SRAM)
|
NEC
|
