PART |
Description |
Maker |
TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
TPH12008NH |
MOSFETs Silicon N-channel MOS (U-MOS DC-DC Converters Switching Voltage Regulators Motor Drivers MOSFETs Silicon N-channel MOS (U-MOS
|
Toshiba Semiconductor
|
2SK2225 |
2 A, 1500 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET Silicon N Channel MOS FET
|
Hitachi Semiconductor
|
RQJ0303PGDQA RQJ0303PGDQATL-E |
3300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET Silicon P Channel MOS FET Power Switching
|
Renesas Electronics Corporation
|
RQJ0201UGDQA RQJ0201UGDQATL-E |
3400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET SC-59A, MPAK-3 Silicon P Channel MOS FET Power Switching
|
Vectron International, Inc. Renesas Electronics Corporation
|
2SK2225 |
Silicon N-Channel MOS FET(N娌??MOSFET)
|
Hitachi,Ltd.
|
2SK2221 |
Silicon N-Channel MOS FET(N娌??MOSFET)
|
Hitachi,Ltd.
|
2SJ56709 2SJ567 2SJ5672-7J1B |
2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
|
Toshiba Semiconductor
|
2SJ296 2SJ296S 2SJ296L |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-263AB Silicon P-Channel MOS FET(P沟道MOSFET) 硅P沟道场效应晶体管性(P沟道MOSFET的)
|
Hitachi,Ltd.
|
RQJ0602EGDQA RQJ0602EGDQATL-E |
1100 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET LEAD FREE, SC-59A, MPAK-3 Silicon P Channel MOS FET Power Switching
|
Vectron International, Inc. Renesas Electronics Corporation
|
RJK0368DPA-00-J0 RJK0368DPA10 |
20 A, 30 V, 0.0224 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8 Silicon N Channel Power MOS FET Power Switching Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
2SK1620 2SK1620L 2SK1620S |
Power switching MOSFET Silicon N-Channel MOS FET
|
HITACHI[Hitachi Semiconductor] http://
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