| PART |
Description |
Maker |
| CS5484-INZ CS5484-INZR |
Four Channel Energy Measurement IC
|
Cirrus Logic
|
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET™ High Energy Power FET
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| JE93I9HTR5 JE9 JE9112HR1 JE9112HR2 JE9112HR3 JE911 |
Digital Media System-on-Chip (DMSoC) 338-NFBGA 大功率磁保持继电
2.0mV Quad Ultra Micropower Rail-to-Rail CMOS Operational Amplifier, 24L SOIC 大功率磁保持继电
HIGH POWER LATCHING RELAY 大功率磁保持继电
Energy Harvesting Module w/ connector, 1.8V to 3.6V, 4.6mJ, 68msec@25mA
Energy Harvesting Module w/ connector, 3.1V to 5.2V, 55mJ, 88msec@150mA
Energy Harvesting Module w/ connector, 3.1V to 5.2V, 8.3mJ, 80msec@25mA
Energy Harvesting Module w/ connector, 1.8V to 3.6V, 30mJ, 75msec@150mA
SOIC socket added to Adapter Module
|
Hongfa Relay
???瀹???靛０?′唤??????
Xiamen Hongfa Electroacoustic Co., Ltd.
厦门宏发电声股份有限公司
HONGFA[Hongfa Technology]
|
| ADE7768AR-REF ADE7768ARZ-RL ADE7768AR-RL |
Energy Metering IC with Integrated Oscillator and Positive Power Accumulation 电能计量IC整合的振荡器和积累的积极力量
Energy Metering IC with Integrated Oscillator and Positive Power Accumulation 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO16
|
Analog Devices, Inc.
|
| MAL222091001E3 MAL222090004E3 |
Electrical Double Layer Energy Storage Capacitors Power and Energy Versions
|
Vishay Siliconix
|
| IRF5NJ540 |
Avalanche Energy Ratings
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.052ohm, Id=22A*)
SURFACE MOUNT (SMD-0.5)100V, N-CHANNEL
100V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package
|
IRF[International Rectifier]
|
| PHD3N40E PHP3N40E PHB3N40E |
PowerMOS transistors Avalanche energy rated 2.5 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHD2N60E PHP2N60E PHB2N60E |
PowerMOS transistors Avalanche energy rated 1.9 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| IRF5N3415 IRF5N3415-15 |
Avalanche Energy Ratings
POWER MOSFET N-CHANNEL(Vdss=150V, Rds(on)=0.042ohm, Id=37.5A)
SURFACE MOUNT (SMD-1) 150V, N-CHANNEL
POWER MOSFET N-CHANNEL(Vdss=150V/ Rds(on)=0.042ohm/ Id=37.5A)
|
IRF[International Rectifier]
|
