| PART |
Description |
Maker |
| AM55-0003TR AM55-0003SMB AM55-0003RTR AM55-0003 |
120NS, PDIP, IND TEMP(FLASH)
120NS, TSOP, IND TEMP(FLASH)
120NS, PLCC, COM TEMP(FLASH)
250 mW Power Amplifier with T/R and Diversity Switches 2.4 - 2.5 GHz
|
ETC
List of Unclassifed Manufacturers
|
| AM9114CDCB AM91L14E/BVA AM9114EPC AM9114C/BVA AM91 |
x4 SRAM
15NS, OTP, PLCC, EXT TEMP, ROHS-A(EPLD)
5V, 20MHZ, SOIC, IND TEMP, GREEN(MCU AVR)
QTR PWR,250NS,CERDIP,883C;LEV B(EPLD) x4的SRAM
25NS, OTP, PLCC, IND TEMP(EPLD) x4的SRAM
25NS, OTP, PDIP, COM TEM(EPLD) x4的SRAM
|
Linear Technology, Corp.
Rohm Co., Ltd.
|
| PUMA67S16000M-025 PUMA2S16000I-45 PUMA67S16000I-45 |
150NS, PLCC, COM TEMP(FLASH)
15NS, 44 PLCC, COM TEMP(EPLD)
30MHZ, 3.3V, 8 LAP, COM TEMP(FPGA)
20NS, 44 PLCC, COM TEMP(EPLD)
150NS, TSOP, IND TEMP(FLASH)
20NS, 44 TQFP, IND TEMP(EPLD)
120NS, SOIC, IND TEMP(EEPROM)
70NS, TSOP, IND TEMP(EEPROM)
15NS, 68 PLCC, IND TEMP(EPLD)
25NS, 68 PLCC, IND TEMP(EPLD)
30MHZ, 32 TQFP, COM TEMP(FPGA)
120NS, PDIP, IND TEMP(EEPROM)
32 MCROCELL CPLD 1.8V ISP TQFP IND GREEN(EPLD)
x32 SRAM Module X32号的SRAM模块
90NS, TSOP, IND TEMP(EEPROM) X32号的SRAM模块
120NS, PLCC, IND TEMP(EEPROM)
|
DB Lectro, Inc.
TE Connectivity, Ltd.
|
| PYX28HC64-12L32MB PYX28HC64-70CWMB PYX28HC64-70L32 |
Access Times of 70, 90, and 120ns Software Data Protection
|
Pyramid Semiconductor C...
|
| ADP3412 ADP3412JR |
Replaced by BQ29415 : Voltage Protection for 2, 3, or 4 Cell LiIon Batteries (2nd Lev Protection) 8-SM8 -25 to 85
Dual MOSFET Driver with Bootstrapping
|
Analog Devices, Inc.
AD[Analog Devices]
|
| UNR2225 UNR2226 UNR2227 UN2225 UN2226 UN2227 |
Flash Memory IC; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-DIP; Supply Voltage Max:5.5V; Access Time, Tacc:120ns; Mounting
Silicon NPN epitaxial planar type
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| MU9C1485A-12TCC MU9C1485A-12TCI MU9C1485A-50TCC MU |
3.3V 70ns 4096 x 64bit widePort LANCAM
5.0V 90ns 4096 x 64bit widePort LANCAM
5.0V 120ns 4096 x 64bit widePort LANCAM
WidePort LANCAM㈢ Family
3.3V 50ns 4096 x 64bit widePort LANCAM
5.0V 50ns 4096 x 64bit widePort LANCAM
5.0V 70ns 4096 x 64bit widePort LANCAM
3.3V 120ns 4096 x 64bit widePort LANCAM
3.3V 90ns 4096 x 64bit widePort LANCAM
|
MUSIC Semiconductors
|
| MU9C4320L MU9C4320L-70TDC MU9C4320L-70TDI MU9C4320 |
90ns 3.3V 256 x 64bit ATMCAM
70ns 3.3V 256 x 64bit ATMCAM
120ns 3.3V 256 x 64bit ATMCAM
4K x 32 Content Addressable Memory (CAM) with a 32-bit wide data interface
|
MUSIC Semiconductors
ETC
N.A.
|
| MK4118AJ-1 MK4118AJ-2 MK4118AJ-3 MK4118AJ-4 MK4118 |
1Kx8-bit static RAM, 120ns acces time, 120ns cycle time.
1Kx8-bit static RAM, 150ns acces time, 150ns cycle time.
1Kx8-bit static RAM, 200ns acces time, 200ns cycle time.
1Kx8-bit static RAM, 250ns acces time, 250ns cycle time.
|
Mostek
|
| WS1M32-G3I WS1M32-120G3I WS1M32-120G3IA WS1M32-100 |
100ns; 5V power supply; 1 x 32 SRAM module
120ns; 5V power supply; 1 x 32 SRAM module
From old datasheet system
|
White Electronic Designs
|
| M48Z02-120PC1 M48Z02-120PC6 M48Z12-120PC1 M48Z12-2 |
CMOS 2K x 8 zeropower SRAM, 120ns
CMOS 2K x 8 zeropower SRAM, 200ns
|
SGS Thomson Microelectronics
|
| HM514258AZP-8 HM514258AZP-12 |
80ns; V(cc/t): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM
120ns; V(cc/t): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM
|
Hitachi Semiconductor
|
