| PART |
Description |
Maker |
| M36W108 M36W108B M36W108B100ZM1T M36W108B100ZM5T M |
8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M68Z128 M68Z128-55N1 M68Z128N |
5V, 1 Mbit (128Kb x8) Low Power SRAM with Output Enable
5V / 1 Mbit 128Kb x8 Low Power SRAM with Output Enable
5V, 1 Mbit 128Kb x8 Low Power SRAM with Output Enable 5V的，1兆位的输128KB的x8低功耗SRAM启用
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
STMicroelectronics N.V.
|
| M27C202-100B1TR M27C202-100B3TR M27C202-100B6TR M2 |
From old datasheet system
2 Mbit (128Kb x16) UV EPROM and OTP EPROM
CAP .18UF 400V POLYPROPYLENE
RES 200-OHM 5% 0.063W 200PPM THK-FILM SMD-0402 TR-7-PA2MM
2 Mbit 128Kb x16 UV EPROM and OTP EPROM 2兆位存储28KB的x16紫外线和OTP存储
8-Pin SOIC Dual-Channel Low Current High Gain Split Darlington Output Optocoupler 2兆位存储28KB的x16紫外线和OTP存储
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
HIROSE ELECTRIC Co., Ltd.
|
| M27W202-100K6 |
2 MBIT (128KB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
|
ST Microelectronics
|
| M29W010B70N6 M29W010B90N6T M29W010B M29W010B45K1 M |
128K X 8 FLASH 2.7V PROM, 70 ns, PQCC32
1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M48Z129V-85PM1 |
1 MBIT (128KB X 8) ZEROPOWER SRAM
|
ST Microelectronics
|
| M295V200BT45M1T M295V200BT45M3T M295V200BT45M6T M2 |
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M29F200BT45M1 M29F200BT45N1 M29F200BT70M1T M29F200 |
2 MBIT (256KB X8 OR 128KB X16, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY
2 MBIT (256KB X8 OR 128KB X16, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| M29F100BB M29F100BT |
1 Mbit 128Kb x8 or 64Kb x16 / Boot Block Single Supply Flash Memory
|
ST Microelectronics
|
| M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM
512K X 8 UVPROM, 100 ns, CDIP40
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27V322-100F1 M27V322-150XP6 M27V322 M27V322-100B1 |
32 Mbit 2Mb x16 Low Voltage UV EPROM and OTP EPROM
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM
Fuses, 150mA 250V SB 5X15 BULK
32 Mbit 2Mb x16 Low Voltage UV EPROM and OTP EPROM 32兆位Mb x16低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M27V800-150XM1TR M27V800 M27V800-100B1TR M27V800-1 |
NND - 8 MBIT (1MB X8 OR 512KB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM 8兆x812KB的x16低压紫外线可擦写可编程只读存储器和OTP存储
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
