| PART |
Description |
Maker |
| 3VD212600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD499650YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD212800YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD324400YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| BM-10EG57ND |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
5X7 DOT MATRIX DISPLAY, HIGH EFFICIENCY RED/YELLOW GREEN, 30.48 mm
|
BRIGHT LED ELECTRONICS CORP
AMERICAN BRIGHT OPTOELECTRONICS CORP
|
| LDD-E304NI |
0.30 SEVEN SEGMENT, DUAL DIGIT DISPLAY, 635nm RED CHIPS, GRAY FACE WITH WHITE SEGMENTS, COMMON ANODE, NO CHIPS IN DECIMALS.
|
List of Unclassifed Manufacturers
|
| IRFP151 IRFP153 IRFP152 IRF150 IRF152 IRFP150 IRFC |
(IRFP150 - IRFP153) HIGH VOLTAGE POWER MOSFET DIE
(IRF150 - IRF153) HIGH VOLTAGE POWER MOSFET DIE
|
International Rectifier
IXYS[IXYS Corporation]
|
| 3VD223600NEYL |
NCH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE
|
Silan Microelectronics Joint-stock
|
| SSB-COB13340SYW-B |
SINGLE COLOR DISPLAY CLUSTER, SUPER YELLOW, 133 mm
133mm x 40mm V.A. SUPER YELLOW LED BACKLIGHT CHIPS ON BOARD, 132 CHIPS, 4.2V 660mA
133mm x 40mm V.A. SUPER YELLOW LED BACKLIGHT, CHIPS ON BOARD, 132 CHIPS, 4.2V 660mA
|
ETC
LUMEX INC.
List of Unclassifed Manufacturers
|
| OD-880-C |
HIGH-POWER GaAlAs IR EMITTER CHIPS
|
OptoDiode Corp
|
| BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管（高击穿电压低集电极发射极饱和电压）
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CHP2010 CHP1505 CHP1206 CHP0505 CHP0502 |
(CHP Series) High Stability Resistor Chips
|
Vishay Intertechnology
|
