| PART |
Description |
Maker |
| UPD448012GY-C10X-MJH UPD448012GY-C85X-MJH UPD44801 |
8M-bit(512K-word x 16-bit) Low power SRAM
|
NEC
|
| W963A6BBN W963A6BBN80I W963A6BBN70 W963A6BBN70E W9 |
Low Power Mobile Products
512K WORD X 16 BIT LOW POWER PSEUDO SRAM
|
WINBOND[Winbond]
Winbond Electronics
|
| MR27V1652E MR27V1652EMA MR27V1652ERA MR27V1652ETN |
1,048,576 - Word x 16-Bit or 2,097-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic componets
|
| K6F8016V3A K6F8016V3A-F K6F8016V3A-TF55 K6F8016V3A |
512K X 16 STANDARD SRAM, 55 ns, PDSO44
From old datasheet system
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| AS6C4008-55STIN AS6C4008-55PCN AS6C4008-55SIN AS6C |
512K X 8 BIT LOW POWER 512K X 8 BIT LOW POWER CMOS SRAM
|
Alliance Semiconductor Corporation
|
| MSM27C852CZ MSC27C852CZ MSM27C8B52CZ |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
From old datasheet system
|
OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
| M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
| UPD448012GY-B55X-MJH UPD448012GY-B85X-MJH UPD44801 |
8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
|
NEC[NEC]
|
| UPD4481162GF-A60 UPD4481162GF-A60Y UPD4481182GF-A6 |
8M-bit(512K-word x 16-bit) ZEROSB(TM) SRAM
8M-bit(512K-word x 18-bit) ZEROSB(TM) SRAM
8M-bit(256K-word x 32-bit) ZEROSB(TM) SRAM
8M-bit(256K-word x 36-bit) ZEROSB(TM) SRAM
|
NEC
|
