| PART |
Description |
Maker |
| RX2.7GBIT/S TX2.7GBIT/S V23832-T2131-M101 V23832-T |
PAROLI 2 Tx AC, 2.7 Gbit/s 帕罗2个发送，交流2.7千兆/
Parallel Optical Links (PAROLI) - PAROLI?2 Rx AC, 2.7 Gbit/s,
Parallel Optical Links (PAROLI) - PAROLI?2 Tx AC, 2.7 Gbit/s, multistandard electrical interface
PAROLI 2 Tx AC, 1.25 Gbit/s
|
Infineon Technologies AG
|
| V23815-U1306-M136 V23814-U1306-M136 RXAC16GBIT/S T |
Parallel Optical Links (PAROLI) - PAROLITx, AC, 1,6 Gbit/s, Increased power budget
Parallel Optical Links (PAROLI) - PAROLI?Rx, AC, 1,6 Gbit/s, Increased power budget
PAROLI Tx AC/ 1.6 Gbit/s
PAROLI Tx AC, 1.6 Gbit/s
|
INFINEON[Infineon Technologies AG]
|
| RXAC16GBIT/S TXAC16GBIT/S |
Parallel Optical Links (PAROLI) - PAROLI?Rx, AC, 1,6 Gbit/s
Parallel Optical Links (PAROLI) - PAROLI?Tx, AC, 1,6 Gbit/s
|
Infineon
|
| V23815-K1306-M136 |
PAROLI Tx AC, 1.25 Gbit/s 帕罗利得克萨斯州，交.25千兆
|
Infineon Technologies AG
|
| NAND04G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，4千兆位，8千兆112 Byte/1056字的页面.8V/3V，NAND闪存
|
STMicroelectronics N.V.
|
| NAND01G-B |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
| NAND08GW3B2AN1E NAND08GW3B2AN1F NAND04GW3B2AN1E NA |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND02GW3B2BN1E NAND02GW3B2BN1F NAND02GW3B2BN6E NA |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
|
Numonyx B.V
|
| V23849-R35-C55 V23849-R36-C55 |
Transceivers by Form-factor MSA - iSFP? 1.25 Gbit/s GBE; 4.25/2.125/1.0625 Gbit/s FC, 850 nm; MM; LC; common ground sheme
Transceivers by Form-factor MSA - iSFP? 1.25 Gbit/s GBE; 4.25/2.125/1.0625 Gbit/s FC, 850 nm; MM; LC; separated ground sheme
|
Infineon
|
| HDMP-3268 |
HDMP-3268 · 3.2 GBit/sec 68 x 68 Digital Crosspoint Switch
3.2 Gbit/sec 68x68 Crosspoint Switch
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| NAND02G-B2C NAND02GR3B2BZA1E NAND02GR4B2BZA1F NAND |
1千兆2千兆位，2112 Byte/1056字的页面.8V/3VNAND闪存
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，2112 Byte/1056字的页面.8V/3V，NAND闪存
|
意法半导
STMicroelectronics N.V.
|
| PM5390 2000181 |
10 Gbit/s Physical Layer Device for POS / ATM and Ethernet
10 Gbit/s Physical Layer Device for POS, ATM and Ethernet
From old datasheet system
|
PMC-Sierra, Inc
|
