| PART |
Description |
Maker |
| CSD363 CSD363O CSD363R CSD363Y |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 240 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 70 - 140 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 80 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 120 - 240 hFE.
|
Continental Device India Limited
|
| 2N6666 |
PLASTIC MEDIUM-POWER SILICON TRANSISTORS
|
Boca Semiconductor Corporation
|
| BD234 BD237 BD234G BD237G BD238 |
Plastic Medium Power Bipolar Transistors
|
ON Semiconductor
|
| TIP111 TIP110 TIP117 TIP112 TIP115 TIP116 |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
|
BOCA[Boca Semiconductor Corporation]
|
| MJE344G MJE34406 |
Plastic NPN Silicon Medium?Power Transistor
|
ON Semiconductor
|
| TIP100 TIP107 |
PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| BD159 BD157 BD158 |
Plastic Medium Power NPN Silicon Transistor
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| MJE10B1 MJE1093 MJE2003 MJE1103 MJE1102 MJE2092 MJ |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| TIP10011 |
NPN Plastic Medium-Power Silicon Transistors
|
Micro Commercial Components
|
| BD136-D |
Plastic Medium Power Silicon PNP Transistor
|
ON Semiconductor
|
