| PART |
Description |
Maker |
| M29F100B M29F100T 5123 M29F100B-90M1R M29F100B-90M |
NND - 1 MBIT (128KB X 8 OR 64KB X 16, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
From old datasheet system
1 Mbit (128Kb x8 or 64Kb x16, Boot Block)Single Supply Flash Memory
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M59DR032A M59DR032B M59DR032A120ZB1T M59DR032A100Z |
2M X 16 FLASH 1.8V PROM, 120 ns, PBGA48
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory 32兆位Mb x16插槽，双行，第低压闪
32 Mbit 2Mb x16 / Dual Bank / Page Low Voltage Flash Memory
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
|
http://
NUMONYX
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| M29F100BB M29F100BT 6612 |
1 Mbit (128Kb x8 or 64Kb x16, Boot Block)Single Supply Flash Memory
From old datasheet system
|
STMicro
|
| SST39LF016 SST39LF016-90-4I-EI SST39VF016-90-4I-EI |
(SST39VF080 / SST39VF016 / SST39LF080 / SST39LF016) 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash
7.6 mm(0.3 inch) Micro Bright Seven Segment Displays
CONNECTOR ACCESSORY
LED Light Bars
D52 - BACKSHELL ENVIRON EMI-RFI STRT MIL 2M X 8 FLASH 2.7V PROM, 70 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PDSO40
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 70 ns, PDSO40
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| M28W160B-GBT M28W160BB M28W160BTB100GB1T M28W160BT |
16 Mbit 1Mb x16/ Boot Block Low Voltage Flash Memory
16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory 16兆x16插槽，低电压启动座快闪记忆体
|
STMicroelectronics N.V.
|
| M36W0R6050B0ZAQT |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
|
ST Microelectronics
|
| M36W0R6030B0ZAQ M36W0R6030T0 M36W0R6030T0ZAQ M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
|
ST Microelectronics
|
| M59DR032A M59DR032A100N1T M59DR032A100N6T M59DR032 |
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M28W800T 6658 |
8 Mbit (512Kb x16, Boot Block) Low Voltage Flash Memory
From old datasheet system
|
STMicro
|
| M29W400BB90N6T M29W400BB90M1T M29W400BB55N1T |
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory 4兆位512KB的x856Kb的x16插槽，引导块低压单电源闪
|
STMicroelectronics N.V.
|
| M28W320C-GBT M28W320CB100GB1T M28W320CB100GB6T M28 |
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory
32 Mbit 2Mb x16, Boot Block Low Voltage Flash Memory
32 Mbit 2Mb x16/ Boot Block Low Voltage Flash Memory
Quadruple ESD transient voltage suppressor - Cd max.: 50 pF; IRM max: 0.1A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 20 V; VRWM: 15 V
Quadruple ESD transient voltage suppressor - Cd max.: 200 pF; IRM max: 0.7A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 6.2 V; VRWM: 4 V
|
意法半导
STMicroelectronics
|
