| PART |
Description |
Maker |
| MBM29LV400T MBM29LV400B |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器) 的CMOS 4分（12k × 8/256K × 16Falsh存储器（12k × 8/256K × 16位单5V的电源电压闪速存储器
|
Fujitsu Limited
Fujitsu, Ltd.
|
| GS88132BT-150IV |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
| GS881E18BD-200IV GS881E36BGT-200V |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 6.5 ns, PBGA165
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 6.5 ns, PQFP100
|
GSI Technology, Inc.
|
| E28F004BVT80 E28F004BVB80 E28F004BVT60 E28F004BVT1 |
4-MBIT (256K X 16/ 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
Dual-Slot, PCMCIA Analog Power Controller
Evaluation Kit for the MAX5943A/B/C/D/E
4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 256K X 16 FLASH 5V PROM, PDSO48
4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 256K X 16 FLASH 5V PROM, PDSO56
|
Intel Corporation
Intel Corp.
Intel, Corp.
|
| HYB514175BJ-50- Q67100-Q2100 HYB514175BJ-55 HYB514 |
256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM
256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存）
|
SIEMENS AG
|
| GS88032AT-166 GS88018AT-166 GS88036AT-166 GS88032A |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 12k × 1856K × 3256K × 36 9Mb以上同步突发静态存储器
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 12k × 18256K × 32256K × 36 9Mb以上同步突发静态存储器
|
Electronic Theatre Controls, Inc.
|
| GS88136BD-300I GS88118BD-300 GS88132BD-300 GS88132 |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
|
http://
|
| CY7C1365V25 CY7C1363V25 CY7C1361V25 7C1361V |
256K x 36/256K x 32/512K x 18 Flowthrough SRAM
From old datasheet system
|
Cypress
|
| CY7C1360V25 CY7C1362V25 CY7C1364V25 7C1360V |
256K x 36/256K x 32/512K x 18 Pipelined SRAM
From old datasheet system
|
Cypress
|
