| PART |
Description |
Maker |
| NSF8MT NSF8AT NSF8BT NSF8DT NSF8GT NSF8JT NSF8KT |
GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER
|
GE[General Semiconductor]
|
| NSB8JT-E3-81 NS8JT-E3-45 NSB8JT-E3-45 NSF8JT-E3-45 |
Glass Passivated General Purpose Plastic Rectifier
|
Vishay Siliconix
|
| S6D |
6.0 Ampere Surface Mount Glass Passivated General Purpose Rectifier
|
Thinki Semiconductor Co., Ltd.
|
| 1N3957 |
(1N3611 - 1N3957) GLASS PASSIVATED GENERAL PURPOSE SILICON RECTIFIERS
|
Central Semiconductor
|
| 1N4246GP 1N4247GP 1N4248GP 1N4245 1N4245GP |
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 400V
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 600V
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 800V
General Purpose Plastic Rectifier, Forward Current 1.0A, Reverse Voltage 200V
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 200V
|
Vishay
|
| EGP30A- EGP30J EGP30A |
Fast Rectifiers (Glass Passivated)
3.0 Ampere Glass Passivated High Efficiency Rectifiers(平均整流电流3.0安培高效率玻璃钝化整流器)
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| 1N5391G 1N5392G 1N5393G 1N5394G 1N5395G 1N5396G 1N |
Standard Recovery Pack: DO-15
GENERAL PURPOSE GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.5A
|
Gulf Semiconductor
|
| CPD0610 |
General Purpose Rectifier 3 Amp Glass Passivated Rectifier Chip
|
Central Semiconductor Corp
|
| HER30-1500G |
Fast Recovery Pack: DO-201AD
ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE拢潞1500V CURRENT拢潞 3.0A
ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE?500V CURRENT 3.0A
|
Gulf Semiconductor
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
