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IRF830A - N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为500V,导通电阻为1.5Ω,漏电流.5A 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRF830A_5021415.PDF Datasheet

 
Part No. IRF830A
Description N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为500V,导通电阻为1.5Ω,漏电流.5A 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 220.19K  /  7 Page  

Maker

Fairchild Semiconductor, Corp.



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Part: IRF830A
Maker: IR
Pack: TO-220
Stock: 8377
Unit price for :
    50: $0.39
  100: $0.37
1000: $0.35

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 Full text search : N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为500V,导通电阻为1.5Ω,漏电流.5A 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
 Product Description search : N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为500V,导通电阻为1.5Ω,漏电流.5A 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB


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