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GB10RF120K - 1200V 20A Low Vce Non Punch Through IGBT in a Econo2 PIM Package

GB10RF120K_5045585.PDF Datasheet


 Full text search : 1200V 20A Low Vce Non Punch Through IGBT in a Econo2 PIM Package
 Product Description search : 1200V 20A Low Vce Non Punch Through IGBT in a Econo2 PIM Package


 Related Part Number
PART Description Maker
GB15XF120K 1200V 25A Low Vce Non Punch Through IGBT in a Econo2 6PACK Package
International Rectifier
IRG4PH30KD IRG4PH30 1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)
IRF[International Rectifier]
20ETS12STRR 20ETS08 20ETS08S 20ETS08STRL 20ETS08ST    INPUT RECTIFIER DIODE
1200V 20A Std. Recovery Diode in a D2-Pakpackage
1200V 20A Std. Recovery Diode in a TO-220AC (2-Pin)package
20ETS12/20ETS12S
800V 20A Std. Recovery Diode in a D2-Pakpackage
800V 20A Std. Recovery Diode in a TO-220AC (2-Pin)package
From old datasheet system
SURFACE MOUNTABLE INPUT RECTIFIER DIODE
InternationalRectifier
IRF[International Rectifier]
NGTB20N120IHS IGBT 1200V 20A FS1 Induction Heating
ON Semiconductor
IRG4PH20K IRG4PH20 INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)
IRF[International Rectifier]
2SA1585S 2SB1424 A5800357 2SB1424Q 2SA1585SR TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | SPAK
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Low Vce(sat) Transistor (-20V, -3A)
From old datasheet system
Low VCE(sat) Transistor(低VCE(sat)晶体
Low Vce(sat) Transistor (-20V/ -3A)
ROHM[Rohm]
Rohm CO.,LTD.
APT13GP120B Volts:1200V VF/Vce(ON):3.6V ID(cont):13Amps|Ultrafast IGBT Family 电压200伏室的Vceon):3.6V的身份证(续):一三安培|超快IGBT的家
Commonwealth Industrial, Corp.
IRG4PH50K INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.77V @Vge=15V Ic=24A)
IRF[International Rectifier]
2SB118410 2SB1184TLR 2SB1243TV2Q Power Transistor (-60V, -3A)
Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A), Complements the 2SD1760 / 2SD1864.
Rohm
IRG4PC40UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE( Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
IRF[International Rectifier]
2SC5585 Hig current. Low VCE(sat):VCE(sat) 250mV at IC=200mA/IB=10mA
TY Semiconductor Co., Ltd
2SB1115A World standard miniature package. Low VCE(sat): VCE(sat)=-0.2V at 1A
TY Semiconductor Co., Ltd
 
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