| PART |
Description |
Maker |
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| M48T128Y-70PM1 M48T128Y-80PM1 M48T128V-70PM1 M48T1 |
5.0 or 3.3 V, 1 Mbit (128 Kb x 8) TIMEKEEPER庐 SRAM
5.0 or 3.3 V, 1 Mbit (128 Kb x 8) TIMEKEEPER? SRAM
|
STMicroelectronics
|
| M36L0R7040B0 M36L0R7040T0 |
128 Mbit Flash Memory and 16 Mbit PSRAM 1.8V Supply Multi-Chip Package
|
STMicroelectronics
|
| AT52SQ1283J |
128-Mbit Flash 32-Mbit PSRAM Stack Memory.
|
Atmel
|
| M36L0R7050B0 |
128 Mbit Flash Memory 32 Mbit PSRAM
|
STMicroelectronics
|
| M48Z128Y-70PM1 M48Z128Y-120PM1 M48Z128Y-85PM1 M48Z |
5.0 V or 3.3 V, 1 Mbit (128 Kbit x 8) ZEROPOWER庐 SRAM
5.0 V or 3.3 V, 1 Mbit (128 Kbit x 8) ZEROPOWER? SRAM
|
STMicroelectronics
|
| NP5Q128A13ESFC0E NP5Q128AE3ESFC0E |
128-Mbit, Quad/Dual/Single Serial Interface, 128-Kbyte Sectors Phase Change Memory (PCM) with 66MHz SPI Bus Interface
|
Numonyx B.V
|
| HYB25M144180C HYB25R144180C HYB25M128160C |
144-Mbit direct RDRAM(144 Mbit 直接 RDRAM)
144-MBit Direct RDRAM(144 M位直接RDRAM) 144兆位的直接的RDRAM144米位直接的RDRAM
128-Mbit direct RDRAM(128 Mbit ?存? RDRAM)
|
SIEMENS AG
|
| M36P0R9070E0_06 M36P0R9070E0 M36P0R9070E0ZAC M36P0 |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| IDT72V8981 IDT72V8981DB IDT72V8981J IDT72V8981J8 7 |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128
128 x 128 TSI, 4 I/O at 2Mbps, Variable Delay, 3.3V
|
Integrated Device Technology
IDT
|
| CY14V101LA |
1-Mbit (128 K x 8/64 K x 16) nvSRAM
|
Cypress Semiconductor
|
| CY14B101LA-SP25XI CY14B101LA-SP25XIT CY14B101LA-SP |
1-Mbit (128 K × 8/64 K × 16) nvSRAM
|
Cypress Semiconductor
|
