| PART |
Description |
Maker |
| AM28F010 AM28F010-200JEB AM28F010-150FIB AM28F010- |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 150 ns, PDIP32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 200 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 90 ns, PDSO32
CMOS Dual Binary Up-Counter 16-TSSOP -55 to 125
CMOS Dual Binary Up-Counter 16-SO -55 to 125
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
|
| P28F010 28F010 29066301 |
IC,EEPROM,FLASH,128KX8,CMOS,DIP,32PIN,PLASTIC
5 Volt Bulk Erase Flash Memory
From old datasheet system
|
intel
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
|
AMD[Advanced Micro Devices]
|
| AM28F256A-120EC AM28F256A-120ECB AM28F256A-120EE A |
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
|
Advanced Micro Devices
|
| AM28F512A AM28F512A-90PIB AM28F512A-120EC AM28F512 |
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory with Embedded Algorithms
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
|
AMD[Advanced Micro Devices]
|
| BM29F400B BM29F400T 29F400T-12PC 29F400T-12PI 29F4 |
4 MEGABIT (512K x 8 ) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY(5V电源4M512K x 8 )扇区可擦除CMOS闪速存储器) 4兆位（为512k × 8伏扇区擦除的CMOS闪存V的电源的4分位（为512k × 8）扇区可擦除的CMOS闪速存储器
4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
|
Winbond Electronics, Corp.
List of Unclassifed Manufacturers
|
| AM28F256A AM28F256A-150FCB AM28F256A-70FC AM28F256 |
32K X 8 FLASH 12V PROM, 70 ns, PDIP32
Octal bus transceivers and registers 24-SOIC 0 to 70 256千比特（32亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 32K X 8 FLASH 12V PROM, 70 ns, PQCC32
8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 256千比特（32亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 32K X 8 FLASH 12V PROM, 200 ns, PDSO32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 32K X 8 FLASH 12V PROM, 70 ns, PDSO32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256千比特（32亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
8-Bit Identity/Magnitude Comparators 20-SO 0 to 70
Octal bus transceivers with open collector outputs 20-SOIC 0 to 70
Serial-in shift registers with output storage registers 24-PDIP 0 to 70
Serial-in shift registers with output storage registers 24-SOIC 0 to 70
Serial-out shift registers 24-SOIC 0 to 70
Synchronous 4-Bit Up/Down Binary Counters 16-PDIP 0 to 70
Serial-out shift registers 24-PDIP 0 to 70
4-by-4 register files with 3-state outputs 16-SOIC 0 to 70
Synchronous 4-Bit Up/Down Binary Counters 16-SOIC 0 to 70
4-by-4 register files with 3-state outputs 16-PDIP 0 to 70
Octal bus transceivers and registers 24-PDIP 0 to 70
Octal bus transceivers with open collector outputs 20-PDIP 0 to 70
|
ADVANCED MICRO DEVICES INC
SPANSION LLC
Advanced Micro Devices, Inc.
|
| M5M29GT161BWG M5M29GT161BVP M5M29GB161BVP |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
16777216-bit CMOS 3.3V-only, block erase flash memory
|
Mitsubishi Electric Corporation
|
| E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器（J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
|
Intel, Corp.
Intel Corp.
http://
Intel Corporation
|
| M28F420 M28F410 |
4 Megabit (x8 or x16, Block Erase) FLASH MEMORY
|
STMicroelectronics
|
| HY29F040AR-12I HY29F040AR-70I HY29F040AR-15E HY29F |
512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
|
Hynix Semiconductor
http://
|
| N25Q00AA |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
|
Micron Technology
|
