| PART |
Description |
Maker |
| CMPD2005S |
SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES 0.225 A, 350 V, 2 ELEMENT, SILICON, SIGNAL DIODE
SMD Switching Diode Dual: High Voltage: In Series
|
Central Semiconductor, Corp.
Central Semiconductor Corp
|
| RM400HV-34S |
CAP CER 22000PF 10% 50V X8R 0805
HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MMBZ5235B MMBZ5250B MMBZ5243B MMBZ5252B MMBZ5245B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 11 V. Test current 20.0 mA.
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 10 V. Test current 20.0 mA.
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 8.7 V. Test current 20.0 mA.
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 7.5 V. Test current 20.0 mA.
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 4.3 V. Test current 20.0 mA.
3-26V Dual Operational Amplifier, Ta = -40 to 105°C; Package: 8 LEAD PDIP; No of Pins: 8; Container: Rail; Qty per Container: 50
5-30V Single Comparator, Ta = -25 to 85°C- Pb-free; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Rail; Qty per Container: 98
2-36V Dual Comparator, Ta= -40 to 125°C; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Rail; Qty per Container: 98
0.5A, 5V, 52kHz Buck PWM Switching Regulator; Package: 8 LEAD PDIP; No of Pins: 8; Container: Rail; Qty per Container: 50 表面贴装稳压二极
3-26V Quad Operational Amplifier, Ta= -40 to 105°C - Pb-free; Package: SOIC 14 LEAD; No of Pins: 14; Container: Tape and Reel; Qty per Container: 2500 表面贴装稳压二极
Small Signal Bias Resistor Transistor SC75 NPN 50V; Package: SC-75 (SOT-416) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000
Ultra High Speed Switching Diode SC88; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 6.2 V. Test current 20.0 mA.
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 5.6 V. Test current 20.0 mA.
SURFACE MOUNT ZENER DIODES
|
Shanghai Lunsure Electronic...
Chenyi Electronics
CHENYI[Shanghai Lunsure Electronic Tech]
上海朗硕科技有限公司
Shanghai LUNSURE Electronic Technology Co., Ltd.
涓?捣???绉????????
Shanghai Lunsure Electr...
|
| BAR63-02L BAR63-02V BAR63-07L4 BAR63-04W BAR63-03W |
Silicon PIN Diodes 硅PIN二极
PIN Diodes - PIN diode for high-speed switching of RF signals
PIN Diodes - High-Speed switching diode in ultra-small SC79 Package
|
INFINEON[Infineon Technologies AG]
|
| CTZ3.0 CTZ2.6 CTZ2.7 CTZ2.X CTZ15 |
(CTZ2.6 - CTZ47) HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD
(CTZxx) HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD
|
CDIL
|
| CPD83V |
Switching Diode High Speed Switching Diode Chip
|
Central Semiconductor Corp
|
| HSU226 |
Diodes>Switching
Silicon Schottky Barrier Diode for High Speed Switching
|
RENESAS[Renesas Electronics Corporation]
|
| BAV99HMFH |
Switching Diode (High speed switching) (corresponds to AEC-Q101)
|
ROHM
|
| BAW56U |
General Purpose Diodes - Silicon Switching Diode Array for high-speed switching
|
Infineon
|
| Q62702-A1097 BAV70S Q62702-A109 |
From old datasheet system
Silicon Switching Diode Array (For high speed switching applications Common cathode)
|
SIEMENS[Siemens Semiconductor Group]
|
