| PART |
Description |
Maker |
| CY7C261-45TMB CY7C263-45DMB CY7C261-35LMB CY7C261- |
EPROM|8KX8|CMOS|FP|24PIN|CERAMIC
EPROM|8KX8|CMOS|DIP|24PIN|CERAMIC 存储器| 8KX8 |的CMOS |双酯| 24针|陶瓷
8K x 8 Power-Switched and Reprogrammable PROM
|
Glenair, Inc.
Cypress Semiconductor
|
| P4C164LL-100SMBLF P4C164LL-120SMBLF P4C164LL-80CWI |
VERY LOW POWER 8Kx8 STATIC CMOS RAM
|
Pyramid Semiconductor C...
|
| N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM
2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
| AS6UA5128 AS6UA5128-BC AS6UA5128-BI |
2.3V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM
2.3V to 3.6V 512K Intelliwatt low-power CMOS SRAM 2.3V.6V的为512k Intelliwatt低功耗CMOS SRAM
2.3V to 3.6V 512K×8 Intelliwatt Low-Power CMOS SRAM(2.3V 3.6V 512K×8 Intelliwatt 低功CMOS 静态RAM)
2.3V to 3.6V 512K8 Intelliwatt low-power CMOS SRAM
2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM
|
Alliance Semiconductor Corporation
SEMICOA[Semicoa Semiconductor]
|
| WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA W |
20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
512K X 8 STANDARD SRAM, 17 ns, CDSO32
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间17ns
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间20ns
|
White Electronic Designs Corporation
|
| GLT6100L08LL-100ST GLT6100L08LL-100TS GLT6100L08LL |
100ns; Ultra low power 128k x 8 CMOS SRAM
55ns; Ultra low power 128k x 8 CMOS SRAM
70ns; Ultra low power 128k x 8 CMOS SRAM
85ns; Ultra low power 128k x 8 CMOS SRAM
|
G-LINK Technology
|
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| CY7C26606 |
8Kx8 Power-Switched and Reprogrammable PROM
|
Cypress Semiconductor
|
| IS62WV25616BLL-55BLI IS62WV25616BLL-55TLI IS62WV25 |
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM 256K X 16 STANDARD SRAM, 70 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| WMS128K8-17FEM WMS128K8-17FM WMS128K8-55CLC WMS128 |
55ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
17ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
15ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
x8 SRAM x8的SRAM
25ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
20ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
|
White Electronic Designs
Microchip Technology, Inc.
Sharp, Corp.
Electronic Theatre Controls, Inc.
Raltron Electronics, Corp.
|
| BS62LV1027DC70 BS62LV1027PC70 BS62LV1027TC70 BS62L |
Very Low Power CMOS SRAM 128K X 8 bit 非常低功耗CMOS SRAM 128K的8
|
BRILLIANCE SEMICONDUCTOR, Inc.
|
| M065608E-V30 |
SRAM Chip: 128K x 8 Very Low Power CMOS SRAM Rad Tolerant
|
Atmel Corporation
|
