| PART |
Description |
Maker |
| CL01-12 CL01-12-15 |
Plastic High Voltage Rectifier Reverse Voltage 12KV Forward Current 350mA
|
Rugao Dachang Electronics Co., Ltd
Rugao Dachang Electroni...
|
| 2CL72B |
Plastic Fast Recover High Voltage Rectifier Reverse Voltage 10KV Forward Current 5mA
|
Rugao Dachang Electronics Co., Ltd
|
| 2CL71A |
Plastic Fast Recover High Voltage Rectifier Reverse Voltage 8KV Forward Current 5mA
|
Rugao Dachang Electronics Co., Ltd
|
| BYS459F-1500 BYS459-1500 BYS459B-1500 |
High Voltage Damper Diodes Reverse Voltage 1500V Forward Current 6.5A Reverse Recovery Time 350ns
|
VISAY[Vishay Siliconix]
|
| US1DL US1BL US1AL |
Surface Mounted High-efficiency Rectifier Reverse Voltage 50 --- 1000 V Forward Current 1.0 A
|
Rugao Dachang Electronics Co., Ltd
|
| C122N |
Silicon controlled rectifier. Reverse blocking triode thyristor. 8 A RMS. Repetitive peak off-state voltage and repetitive peak reverse voltage 800 V.
|
Motorola
|
| NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Receptacle With A Wire Wrap Tail
Silicon Power Rectifier Diode / 40 Amp
Silicon Power Rectifier Diode 40 Amp
NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp
40 A, 300 V, SILICON, RECTIFIER DIODE
40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| GBL400 GBL404 GBL402 GBL401 GBL406 GBL408 |
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 800V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 600V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)
Aluminum Polymer SMT Capacitor; Capacitance: 1000uF; Voltage: 4V; Case Size: 10x8 mm; Packaging: Tape & Reel
|
PANJIT[Pan Jit International Inc.]
PanJit International Inc.
|
| NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon Power Rectifier Diode 6 Amp
Silicon Power Rectifier Diode, 6 Amp
Silicon Power Rectifier Diode / 6 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
|
NTE[NTE Electronics]
|
| HER103G HER108G HER101G HER102G HER104G HER105G HE |
Octal D-type Transparent Latches With 3-State Outputs 20-CFP -55 to 125
GLASS PASSIVATED HIGH EFFICIENCY RECTIFIER, Reverse Voltage - 50 to 1000 Volts, Forward Current - 1.0Ampere
|
上海朗硕科技有限公司
CHENYI[Shanghai Lunsure Electronic Tech]
Chenyi Electronics
|
| P6KE200C P6KE9.1 P6KE9.1C P6KE47C P6KE51C P6KE30 P |
600W TRANSIENT VOLTAGE SUPPRESSORS
Reverse stand-off voltage: 128.00V, 600W transient voltage suppressor
Reverse stand-off voltage: 138.00V, 600W transient voltage suppressor
Low Power 5V RS232 Dual Driver/Receiver with 0.1?μF Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?°C to 85?°C 电可擦除可编程逻辑器件
600W TRANSIENT VOLTAGE SUPPRESSORS 600W瞬态电压抑制器
Single Output LDO, 200mA, Fixed(2.5V), Low Quiescent Current, Low Noise, High PSRR 5-SOT -40 to 85
2.5-V 460-Kbps RS-232 Transceiver With /-15-kV ESD Protection 20-TSSOP -40 to 85
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 6.8 TO 440 Volts 600Watt Peak Power 5.0 Watt Steady State)
Reverse stand-off voltage: 171.00V, 600W transient voltage suppressor
|
Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
Panjit International Inc
Microsemi
|
