| PART |
Description |
Maker |
| SCH2602 |
350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| NX3008NBKT-115 |
30 V, 350 mA N-channel Trench MOSFET
|
NXP Semiconductors
|
| NGB8206ANT4G NGB8206NT4G NGB8206ANSL3G NGB8206N11 |
Ignition IGBT 20 A, 350 V, N.Channel D2PAK
|
ON Semiconductor
|
| NGD8205N |
Ignition IGBT, N-Channel, 20 A, 350 V, DPAK
|
ON Semiconductor
|
| AD7811YR |
2.7 V to 5.5 V/ 350 kSPS/ 10-Bit 4-/8-Channel Sampling ADCs
|
Analog Devices
|
| IRF721 |
3.3 A, 350 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
|
STMICROELECTRONICS
|
| MGB15N35CL MGP15N35CL06 MGP15N35CL MGB15N35CLT4 |
Ignition IGBT 15 Amps, 350 Volts N-Channel TO-220 and D2PAK
|
ONSEMI[ON Semiconductor]
|
| MJ10000 |
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS 20 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AA
|
Motorola Mobility Holdings, Inc.
Motorola Inc
MOTOROLA[Motorola Inc]
|
| FSL23A0R FSL23A0D FN4476 FSL23A0R4 FSL23A0D1 FSL23 |
6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
6A/ 200V/ 0.350 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| IRF713 IRF710 MTP2N35 MTP2N40 IRF711 IRF712 |
IRF710-713 MTP2N35/2N40 N-Channel Power MOSFETs
N-Channel Power MOSFETs, 2.25 A, 350-400 V
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
