| PART |
Description |
Maker |
| ITE08C06 ITE08F06 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-247AA
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 8A条一（c）| TO - 220AB现有
|
Continental Device India, Ltd.
|
| IRG4CC81KB IRG4CC40RB |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | CHIP 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|芯片
IRG4CC81KB IGBT Die in Wafer Form
|
International Rectifier
|
| HGT1S3N60B3S HGT1S3N60B3S9A |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB
TRANS IGBT CHIP N-CH 600V 7A 3TO-263AB RAIL
|
Fairchild Semiconductor
|
| CT20AS8 |
TRANSISTOR | IGBT | N-CHAN | 450V V(BR)CES | 130A I(C) | TO-252 晶体管| IGBT的|正陈| 450V五（巴西）国际消费电子展| 130A条一（c）|52
|
Mitsubishi Electric, Corp.
|
| IXGH40N30BD1S |
TRANSISTOR | IGBT | N-CHAN | 300V V(BR)CES | 60A I(C) | TO-247SMD 晶体管| IGBT的|正陈| 300V五（巴西）国际消费电子展|0A条（c）的|47SMD
|
IXYS, Corp.
|
| IXSK40N60BD1 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 75A I(C) | TO-264AA 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 75A条一（c）|64AA
|
IXYS, Corp.
|
| HGT1S5N120BNDS HGT1S5N120BNDS9A |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 10A I(C) | TO-263AB
21A, 1200V, NPT Series N-Channel IGBTswith Anti-Parallel Hyperfast Diodes
|
Fairchild Semiconductor
|
| FF75R12KF |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 75A I(C) | M:HL093HD5.6 晶体管| IGBT的|正陈|双| 1.2KV五（巴西）国际消费电子展| 75A条一（c）|米：HL093HD5.6
|
Infineon Technologies AG
|
| IXGH24N60C |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-247AD 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 48A条一（c）|采用TO - 247AD
|
IXYS, Corp.
|
