| PART |
Description |
Maker |
| FGB20N6S2 FGH20N6S2 FGP20N6S2 FGB20N6S2T |
28 A, 600 V, N-CHANNEL IGBT, TO-263AB TO-263AB, 3 PIN
600V/ SMPS II Series N-Channel IGBT
600V, SMPS II Series N-Channel IGBT, TO-263/D2PAK Package
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| HGTG40N60A4 FN4782 |
600V/ SMPS Series N-Channel IGBT
600V, SMPS Series N-Channel IGBT
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| HGTP3N60A4 HGT1S3N60A4S HGTD3N60A4S |
600V, SMPS Series N-Channel IGBT 17 A, 600 V, N-CHANNEL IGBT, TO-263AB
600V/ SMPS Series N-Channel IGBT
|
Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
|
| HGTG30N60A4D FN4830 |
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| HGT1N40N60A4 HGT1N40N60A4D |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V的，开关电源系列N沟道IGBT的与反平行Hyperfast二极
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
|
Fairchild Semiconductor, Corp.
|
| FGH60N6S2 |
600V, SMPS II Series N-Channel IGBT
600V/ SMPS II Series N-Channel IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| FGB30N6S2 FGP30N6S2 FGH30N6S2 FGB30N6S2T |
600V, SMPS II Series N-Channel IGBT
600V/ SMPS II Series N-Channel IGBT
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| HGTG40N60B3 FN3943 |
70A, 600V, UFS Series N-Channel IGBT(70A, 600V锛?娌??缁????????浣??)
70A, 600V, UFS Series N-Channel IGBT(70A, 600V，N沟道绝缘栅双极晶体管) 70 A, 600 V, N-CHANNEL IGBT, TO-247
From old datasheet system
|
HARRIS SEMICONDUCTOR
Intersil, Corp.
Intersil Corporation
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| FQA10N60C |
600V N-Channel MOSFET
600V N-Channel Advance Q-FET C-Series
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
