| PART |
Description |
Maker |
| AS6UA25616-TI AS6UA25616 AS6UA25616-BC AS6UA25616- |
2.3V to 3.6V 256K×16 Intelliwatt low-power CMOS SRAM with one chip enable(2.3V 3.6V 256K×16 Intelliwatt 低功CMOS 静态RAM（带单片使能
2.3V to 3.6V 256K16 Intelliwattlow-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K6 Intelliwattlow-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K16 Intelliwatt low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K×16 Intelliwatt?/a> low-power CMOS SRAM with one chip enable
|
Alliance Semiconductor Corporation
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| AS7C33128NTF32_36B AS7C33128NTF36B-80TQIN AS7C3312 |
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 8 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 7.5 ns, PQFP100
Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection 128K X 36 ZBT SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 10 ns, PQFP100
LM194/LM394 Supermatch Pair; Package: TO-99; No of Pins: 6; Qty per Container: 500; Container: Box 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
LM195/LM395 Ultra Reliable Power Transistors; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail
LM392 Low Power Operational Amplifier/Voltage Comparator; Package: SOIC NARROW; No of Pins: 8; Qty per Container: 95; Container: Rail
3.3V 128K × 32/36 Flowthrough Synchronous SRAM with NTDTM
LM3916 Dot/Bar Display Driver; Package: MDIP; No of Pins: 18; Qty per Container: 20; Container: Rail
LM392 Low Power Operational Amplifier/Voltage Comparator; Package: MDIP; No of Pins: 8; Qty per Container: 40; Container: Rail
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| N08L6182AB27I N08L6182AB27IT N08L6182AB7I N08L6182 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K ? 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
8 Mb, 1.8 V Low Power SRAM; Package: BGA Green; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
8 Mb, 1.8 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
|
ON Semiconductor
|
| WMS128K8-17FEM WMS128K8-17FM WMS128K8-55CLC WMS128 |
55ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
17ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
15ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
x8 SRAM x8的SRAM
25ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
20ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
|
White Electronic Designs
Microchip Technology, Inc.
Sharp, Corp.
Electronic Theatre Controls, Inc.
Raltron Electronics, Corp.
|
| BS62LV1027DC70 BS62LV1027PC70 BS62LV1027TC70 BS62L |
Very Low Power CMOS SRAM 128K X 8 bit 非常低功耗CMOS SRAM 128K的8
|
BRILLIANCE SEMICONDUCTOR, Inc.
|
| UT62L12816 UT62L12816BS-55LI UT62L12816BS-55LLI UT |
128K x 16 BIT LOW POWER CMOS SRAM 128K的16位低功耗CMOS SRAM
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| HY62V8200B HY62V8200BLLR1 HY62V8200BLLR1-E HY62V82 |
Low Power Slow SRAM - 2Mb
HY62V8200B Series 256Kx8bit CMOS SRAM
|
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
http://
|
| HY62VF08401C HY62VF08401C-SS55I |
512K X 8 STANDARD SRAM, 55 ns, PDSO32
Super Low Power Slow SRAM - 4Mb
|
HYNIX SEMICONDUCTOR INC
|
| HM62V16100I HM62V16100LBPI-4 HM62V16100LBPI-4SL HM |
Memory>Low Power SRAM
Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit)
|
HITACHI[Hitachi Semiconductor]
Renesas Electronics Corporation
|
| IC62LV256 IC62LV256-70UI IC62LV256-100J IC62LV256- |
45ns; 3.3V; 32K x 8 low voltage static RAM
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
From old datasheet system
32K x 8 Low Power SRAM with 3.3V 32K的8低功耗SRAM.3V
|
ICSI[Integrated Circuit Solution Inc]
Hitachi,Ltd.
Cypress Semiconductor, Corp.
|
| UC62LV2008IH-70 UC62LV2008 UC62LV2008CA-55 UC62LV2 |
Low Power CMOS SRAM 低功耗CMOS SRAM
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
