| PART |
Description |
Maker |
| K7Z327285M |
512Kx72-Bit DLW(Double Late Write) RAM Data Sheet
|
Samsung Electronic
|
| HM64YLB36512BP-33 HM64YLB36512BP-28 HM64YLB36512-1 |
512K X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit)
|
Renesas Electronics Corporation
|
| GS8170LW36AC |
18Mb B>1x1Lp CMOS I/O Late Write SigmaRAM
18Mb x1Lp CMOS I/O Late Write SigmaRAM 35.7x1Lp的CMOS的I / O后写SigmaRAM
|
GSI Technology, Inc.
|
| GS8170DW36C GS8170DW36C-200 GS8170DW36C-250 GS8170 |
18Mb B>1x1Dp CMOS I/O Double Late Write SigmaRAM
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 256K X 72 STANDARD SRAM, 2.25 ns, PBGA209
|
GSI Technology, Inc.
|
| MCM63R918FC3.3R MCM63R918FC3.7R MCM63R836FC3.7R |
512K X 18 LATE-WRITE SRAM, 1.65 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
512K X 18 LATE-WRITE SRAM, 1.85 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
256K X 36 LATE-WRITE SRAM, 1.85 ns, PBGA119
|
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| MCM69R818CZP4.4 MCM69R736CZP4.4 MCM69R736CZP4.4R M |
4M Late Write HSTL
|
Motorola, Inc
|
| MCM69R536ZP4.4R |
32K X 36 LATE-WRITE SRAM, 2.2 ns, PBGA119
|
MOTOROLA INC
|
| GS8330DW36 GS8330DW72 |
(GS8330DW36/72) 36M Double Late Write SRAM
|
GSI Technology
|
| K7Z167288B K7Z163688B |
512Kx36 & 256Kx72 DLW(Double Late Write) RAM
|
Samsung semiconductor
|
| GS8170DW72C-333I GS8170DW36C GS8170DW36C-200 GS817 |
18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
|
GSI[GSI Technology]
|
| MCM63R818FC3.7R |
256K X 18 LATE-WRITE SRAM, 1.85 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
|
Motorola Mobility Holdings, Inc.
|
