PART |
Description |
Maker |
CY27H010-30ZC CY27H010-35JC CY27H010-35WMB CY27H01 |
128K x 8 High-Speed CMOS EPROM 128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 35 ns, PQCC32 128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 35 ns, PDSO32 128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 30 ns, PDIP32 128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 30 ns, PQCC32 From old datasheet system
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Cypress Semiconductor, Corp. Atmel, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
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W26020A W26020A-20 W26020A-25 W26020AT-20 W26020AT |
128K X 16 High Speed CMOS Static RAM 128K x 16 HIGH-SPEED CMOS STATIC RAM From old datasheet system 128K×16bit High-Speed CMOS Static RAM(128K×16位高速CMOS静态RAM) 128K的16位高速CMOS静态RAM28K的16位高速的CMOS静态RAM)的 128K X 16 High Speed CMOS Static RAM 128K的16高速CMOS静态RAM
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WINBOND[Winbond] Winbond Electronics Corp Winbond Electronics, Corp.
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IDT70V3319S133PRFI IDT70V3399S166PRFI IDT70V3319S1 |
HIGH-SPEED 3.3V 256/128K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 3.3V56/128K × 18 SYNCHRONOU S双,端口静态RAM.5V的接 HIGH-SPEED 3.3V 256/128K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 18 DUAL-PORT SRAM, 15 ns, PQFP128
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Integrated Device Technology, Inc.
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IS61LV12816LL-12T IS61LV12816LL-12BI IS61LV12816LL |
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PQFP44 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PDSO44
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Integrated Silicon Solution, Inc.
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IDT70V639S10BFI IDT70V639S15BF IDT70V639S12BFI IDT |
HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM 高.3 128K的18 ASYNCHRONO美国双端口静态RAM HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM 128K X 18 DUAL-PORT SRAM, 15 ns, PBGA208 HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM 128K X 18 DUAL-PORT SRAM, 12 ns, PBGA208 HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM 128K X 18 DUAL-PORT SRAM, 12 ns, PQFP128
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Integrated Device Technology, Inc.
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K6R3024V1D-HI12 K6R3024V1D K6R3024V1D-HC09 K6R3024 |
From old datasheet system 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) 128K的24位高速CMOS静态RAM.3V的工作) 128K X 24 MULTI DEVICE SRAM MODULE, 10 ns, PBGA119
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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A63G7332 A63G7332E-42 A63G7332E-45 A63G7332E-5 A63 |
128K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output 128K的32位同步高的Burst计数器和流水线数据输出高速SRAM 4.2ns 128K x 32bit synchronous high speed SRAM 4.2ns; 128K x 32bit synchronous high speed SRAM with burst counter and pipelined data output 4.5ns 128K x 32bit synchronous high speed SRAM 4.5ns; 128K x 32bit synchronous high speed SRAM with burst counter and pipelined data output
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AMIC Technology, Corp. AMIC Technology Corporation
|
V61C5181024 |
128K X 8 HIGH SPEED STATIC RAM
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MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp
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29C010PI-1 29C010PI-2 29C010PI-3 29C010JC-1 29C010 |
High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM High speed 150 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM High speed 200 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns. High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns. High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns.
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Turbo IC
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IC61C1024L IC61C1024 IC61C1024L-12HI IC61C1024L-15 |
128K x 8 HIGH-SPEED CMOS STATIC RAM 128K的8高速CMOS静态RAM GT 12C 12#12 PIN RECP WALL RM 128K的8高速CMOS静态RAM RES CH 68.1 EW 1% ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
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Electronic Theatre Controls, Inc. ICSI Integrated Circuit Solution Inc
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