| PART |
Description |
Maker |
| IS61LV12824-8TQ IS61LV12824 IS61LV12824-10B IS61LV |
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K的24 HIGH-SPEED的CMOS静态RAM.3V电源
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 8 ns, PQFP100
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 8 ns, PBGA119
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 10 ns, PBGA119
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 10 ns, PQFP100
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存（5V工作），旋转引脚输出。在商用和工业温度范围操
128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
128K x 8 high speed static RAM, 5V operating, 20ns
128K x 8 high speed static RAM, 5V operating, 15ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| W24010A |
128K×8 High-Speed CMOS Static RAM(128K×8位高速CMOS静态RAM) 8 × 128K的高速CMOS静态RAM28K的8位高速的CMOS静态RAM）的
|
Winbond Electronics, Corp.
|
| CXK77B3641GB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit）（4分位，写延迟LVTTL高速同步静态随机存储器28K的36位）
|
Sony, Corp.
|
| A63L73321E-10 A63L73321E-9.5 |
10ns 128K x 32bit synchronous high speed SRAM
9.5ns 128K x 32bit synchronous high speed SRAM
|
AMIC Technology
|
| W241024A W241024AJ- W241024AI-12 W241024AQ-20 W241 |
128L X 8 HIGH SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32
128L X 8 HIGH SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 20 ns, PDSO32
From old datasheet system
128*8HIGH SPEED COMOS STATIC RAM
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| AS7C33128PFD36A-166TQI AS7C33128PFD32A AS7C33128PF |
3.3V 128K x 36 pipeline synchronous SRAM, clock speed - 150MHz
3.3V 128K x 36 pipeline synchronous SRAM, clock speed - 133MHz
3.3V 128K x 36 pipeline synchronous SRAM, clock speed - 100MHz
3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 166MHz
3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 150MHz
3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 133MHz
3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 100MHz
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 10 ns, PQFP100
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor Corp...
|
| A63P7336E-4.2F A63P7336 A63P7336E A63P7336E-2.6 A6 |
128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output 128K的米36位同步高的Burst计数器和流水线数据输出高速SRAM
128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output 128K的米6位同步高的Burst计数器和流水线数据输出高速SRAM
DIODE, ZENER, 12V, 500MW, DO35
|
AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
|
| V61C3181024 |
128K X 8 HIGH SPEED STATIC RAM
|
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| 29C010PI-1 29C010PI-2 29C010PI-3 29C010JC-1 29C010 |
High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed 150 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed 200 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns.
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns.
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns.
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Turbo IC
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