| PART |
Description |
Maker |
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| ZX60-M-SERIES ZX60-2510M ZX60-2514M ZX60-2522M ZX6 |
High Isolation Amplifiers 50з, 0.5 to 5.9 GHz 500 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
High Isolation Amplifiers 50? 0.5 to 5.9 GHz
From old datasheet system
High Isolation Amplifiers 50/ 0.5 to 5.9 GHz
|
MINI[Mini-Circuits]
|
| MAR-1 MAR-3 MAR-4 |
(MAR-x ) ML AMPL / SURF MT / T&R / RoHS
|
Mini-Circuits
|
| AK4640 |
16BIT CODEC WITH MIC /HP/SPK-AMPl
|
Asahi Kasei Microsystems Co.,Ltd
|
| TIM1414-7-252 |
HIGH POWER P1dB=38.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| TIM1414-2-252 |
HIGH POWER P1dB=33.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| EL0092 |
High Power Limiters 0.15 GHz to 0.45 GHz
|
Micronetics, Inc.
|
| CGD1046HI |
1 GHz, 27 dB gain GaAs high output power doubler 40 MHz - 1003 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
|
| SST12LP08 |
2.4 GHz High-Power, High-Gain Power Amplifier
|
Silicon Storage Technology, Inc
|
| SST12LP14A |
2.4 GHz High-Power, High-Gain Power Amplifier
|
SST
|
| SST12LP19E-QX8E |
2.4 GHz High-Power, High-Gain Power Amplifier
|
List of Unclassifed Manufacturers
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