| PART |
Description |
Maker |
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| TIM1414-2-252 |
HIGH POWER P1dB=33.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| ES0309-100 |
High Power Switch 0.1 GHz to 1 GHz
|
Micronetics, Inc.
|
| ES0313-10 |
High Power Switch 0.5 GHz to 4 GHz
|
Micronetics, Inc.
|
| EL0051 |
High Power Limiters 0.5 GHz to 2 GHz
|
Micronetics, Inc.
|
| EL0056 |
High Power Limiters 5 GHz to 9 GHz
|
Micronetics, Inc.
|
| EL0092 |
High Power Limiters 0.15 GHz to 0.45 GHz
|
Micronetics, Inc.
|
| TSDF2020W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise;
25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| LD7217W LD7217S LD7217 |
6 GHz, 600 W/700 W CW, PPM FOCUSING, HIGH POWER GAIN 6千兆赫，600 W/700 W连续，分之为重点，高功率增益
6 GHz / 600 W/700 W CW / PPM FOCUSING / HIGH POWER GAIN
6 GHz 600 W/700 W CW PPM FOCUSING HIGH POWER GAIN
|
NEC, Corp.
NEC[NEC]
|
| SST12LP14A-QVCE-K SST12LP14A SST12LP14A-QVCE |
2.4 GHz High-Power, High-Gain Power Amplifier
|
SST[Silicon Storage Technology, Inc]
|
| SST12LP14C-QVCE-K SST12LP14C SST12LP14C-QVCE |
2.4 GHz High-Power, High-Gain Power Amplifier
|
SST[Silicon Storage Technology, Inc]
|
