| PART |
Description |
Maker |
| SGM2013 SGM2013N |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
SONY [Sony Corporation]
|
| NE8500100 NE8500100-RG NE8500100-WB NE500100 NE500 |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| FLL1200IU-2 |
L-Band Medium & High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
L-Band Medium & High Power GaAs FET
|
Fujitsu Component Limited.
Fujitsu, Ltd.
Fujitsu Limited
|
| 3SK184 |
GaAs N-Channel MES FET
|
Panasonic
|
| 3SK241 |
GaAs N-Channel MES FET
|
Panasonic Semiconductor
|
| SGM2014AN SGM2014 |
GaAs N-channel Dual Gate MES FET
GaAs N-channel Dual Gate MES FET
|
SONY[Sony Corporation]
|
| SWD-109TR SWD-119TR SWD-109119 SWD-109RTR SWD-119R |
Single/quad driver for GaAs FET switche and attenuator
Single/Quad Drivers for GaAs FET Switches and Attenuators
|
MA-Com
Tyco Electronics
|
| NE3521M04-T2B-A |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
|
California Eastern Labs
|
| NE3517S03-T1C NE3517S03-T1D |
K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET
|
Renesas Electronics Corporation
|
| NE3520S03-T1D-A |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
|
California Eastern Labs
|
| NE3513M04-T2B-A |
N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
|
California Eastern Labs
|
