| PART |
Description |
Maker |
| IXFH4N100 IXFT4N100 IXFH4N100Q IXFT4N100Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电.0Ω的N沟道增强型HiPerFET功率MOSFET) 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4A I(D) | TO-247AD
HiPerFET Power MOSFETs Q-Class
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IRF330 MTM5N35 MTM5N40 IRF733 IRF730 MTPSN40 IRF73 |
IRF330-333/IRF730-733 MTM/MTP5N35/5N40 N-Channel Power MOSFETs
N-Channel Power MOSFETs, 5.5 A, 350 V/400 V
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| IRFU110 IRFR110 FN3275 |
From old datasheet system
4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs
(IRFR110 / IRFU110) N-Channel Power MOSFETs
|
HARRIS SEMICONDUCTOR
Intersil Corporation
|
| IRFP244 IRFP245 IRFP246 IRFP247 |
15A and 14A 275V and 250V 0.28 and 0.34 Ohm N-Channel Power MOSFETs
(IRFP244 / IRFP245 / IRFP246 / IRFP247) N-Channel Power MOSFETs
15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 15 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSJ163R4 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
70A/ 100V/ 0.022 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| IRF101 IRF140-143 IRF142 IRF143 IRF541 IRF543 IRF5 |
N-Channel Power MOSFETs/ 27 A/ 60-100V
N-Channel Power MOSFETs, 27 A, 60-100V 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Samsung semiconductor
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
| IXFTN100 IXFX15N100 IXFH14N100 IXFHN100 IXFX14N100 |
HiPerFET Power MOSFETs 14 A, 1000 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IRF6723M2DTR1P IRF6723M2DTR1PBF IRF6723M2DTRPBF IR |
15 A, 30 V, 0.0066 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Dual Common Drain Control MOSFETs for Multiphase DC-DC Converters
Replaces Two Discrete MOSFETs
|
International Rectifier
|
| MRF5S21130SR3 MRF5S21130 MRF5S21130R3 MRF5S21130S |
MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 MHz, 28 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| ISL9N303AS3ST ISL9N303AS3 ISL9N303AP3 N303AS N303A |
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
RECTIFIER SCHOTTKY DUAL COMMON-CATHODE 30A 40V 250A-Ifsm 0.55Vf 1A-IR D2PAK 800/REEL-13 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Logic Level UltraFET Trench MOSFETs 30V / 75A / 3.2m
N-Channel Logic Level UltraFET Trench MOSFETs 30V 75A 3.2m
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m?/a>
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IXFNB24N100 IXFNB24N100F IXFN24N100 IXFN24N100F |
HiPerRF Power MOSFETs 24 A, 1000 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET
HiPerRF Power MOSFETs F-Class: MegaHertz Switching
|
IXYS, Corp.
IXYS Corporation
|
|
