| PART |
Description |
Maker |
| 74LCX38 |
Low Voltage Quad 2-Input NAND Gate (Open Drain)
|
fairchild
|
| 74LX1G03CTR 74LX1G03STR |
LOW VOLTAGE SINGLE 2-INPUT OPEN DRAIN NAND GATE
|
ST Microelectronics
|
| KI4558DY |
PIN Configuration Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
| HCF4006B HCF4006BC1 HCF4006BEY HCF4006BM1 HCC_HCF4 |
18-STAGE STATIC SHIFT REGISTER
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):28mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Drain-Source Breakdown Voltage:60V 18 -阶段静态移位寄存器
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
|
| MC74LCX38 ON1566 MC74LCX38SD MC74LCX38D MC74LCX38D |
From old datasheet system
LOW-VOLTAGE CMOS QUAD 2-INPUT NAND GATE OPEN DRAIN
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| 74AUP2G38 74AUP2G38DC 74AUP2G38GM 74AUP2G38GT 74AU |
Low-power dual 2-input NAND gate (open-drain)
Low-power dual 2-input NAND gate; open drain; Package: SOT765-1 (VSSOP8); Container: Reel Pack, Reverse, Reverse AUP/ULP/V SERIES, DUAL 2-INPUT NAND GATE, PDSO8
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| HCF4000 HCF4000B HCF4001 HCF4001B HCF4002 HCF4002B |
NOR GATE
(289.19 k)
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,6A I(D),TO-3 RoHS Compliant: Yes
T-PNP-SI-AF PO- .75W
T-NPN- SI-PO & SW-PD 40 W 或非
MOSFET-PWR N-CH HI SPEED 或非
MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:10.5A; On-Resistance, Rds(on):0.3ohm; Package/Case:3-TO-220; Continuous Drain Current - 100 Deg C:7.5A; Continuous Drain Current - 25 Deg C:10.5A 或非
MOSFET-PWR 800V 4A 或非
NOR GATE 或非
MOSFET-PWR 500V 8A
|
ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M54HC09 M54HC09F1R M74HC09B1R M74HC09C1R M74HC09M1 |
From old datasheet system
QUAD 2-INPUT AND GATE (OPEN DRAIN)
QUAD 2-INPUT AND GATE OPEN DRAIN
|
STMICROELECTRONICS[STMicroelectronics]
|
| IRF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A.
|
General Electric Solid State
|
| IRF452 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A.
|
General Electric Solid State
|
