| PART |
Description |
Maker |
| IS61DDPB22M36A/A1/A2 IS61DDPB24M18A IS61DDPB24M18A |
4Mx18, 2Mx36 72Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| K7I643682M07 K7I641882M |
2Mx36 & 4Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7R643682M07 K7R640982M K7R643682M-FI160 K7R643682 |
2Mx36 & 4Mx18 & 8Mx9 QDR II b2 SRAM
2M X 36 QDR SRAM, 0.5 ns, PBGA165
2M X 36 QDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|
| NCP51510MNTWG |
3 Amp VTT Termination Source / Sink Regulator for DDR, DDR-2, DDR-3, DDR-4
|
ON Semiconductor
|
| NCP51200 |
3 Amp Source / Sink VTT Termination Regulator for DDR, DDR-2, DDR-3, DDR-4
|
ON Semiconductor
|
| KMM5362203C2W |
2Mx36 DRAM Simm Using 1Mx16 And 1Mx4 Quad Cas
|
Samsung Semiconductor
|
| HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| MT46V32M8P-75ZATF MT46V16M16CV-5BK MT46V64M4 MT46V |
32M X 8 DDR DRAM, 0.75 ns, PDSO66 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66
16M X 16 DDR DRAM, 0.7 ns, PBGA60
Double Data Rate (DDR) SDRAM
|
Micron Technology
|
| GS864118 GS864132 GS864136 |
72Mb Burst SRAMs
|
GSI Technology
|
| GS864218 GS864236 GS8642272 |
72Mb Burst SRAMs
|
GSI Technology
|
| HM5425801B |
256M SSTL_2 interface DDR SDRAM(256M SSTL_2接口 DDR 同步DRAM) 256M DDR SDRAM的接口SSTL_256M SSTL_2接口的DDR同步DRAM）的
|
Hitachi,Ltd.
|
