| PART |
Description |
Maker |
| IS61DDPB22M18A IS61DDPB22M18A/A1/A2 IS61DDPB21M36A |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| K7J323682C K7J321882C |
1Mx36 & 2Mx18 DDR II SIO b2 SRAM
|
Samsung semiconductor
|
| K7A321800M-QC25 K7A323600M-QC20 K7A321800M-QC20 K7 |
1Mx36 & 2Mx18 Synchronous SRAM
1Mx36 & 2Mx18 Synchronous SRAM 1Mx36
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7K3236U2C K7K3218U2C-EC330 K7K3218U2C-FC330 |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
DDR SRAM, PBGA165 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
|
Samsung semiconductor
Maxim Integrated Products, Inc.
|
| IS61QDP2B21M36A1 IS61QDP2B21M36A2 |
1Mx36 and 2Mx18 configuration available
|
Integrated Silicon Solu...
|
| K7P323666M K7P321866M |
1Mx36 & 2Mx18 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7K3236U2C K7K3218U2C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7R320982C K7R323682C-FC20 K7R323682C-FC25 K7R3236 |
1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7I323682M K7I321882M K7M161825A-QCI65 |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
512Kx36 & 1Mx18 Pipelined NtRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K7R323682MK7R321882MK7R320882M |
1Mx36-bit, 2Mx18-bit, 4Mx8-bit QDRII b2 SRAM Data Sheet
|
Samsung Electronic
|
| GS8342R18GE-267 GS8342R36GE-167 GS8342R18E-267 GS8 |
36Mb SigmaCIO DDR-II Burst of 4 SRAM 4M X 8 DDR SRAM, 0.45 ns, PBGA165
36Mb SigmaCIO DDR-II Burst of 4 SRAM 2M X 18 DDR SRAM, 0.45 ns, PBGA165
36Mb SigmaCIO DDR-II Burst of 4 SRAM 4M X 9 DDR SRAM, 0.5 ns, PBGA165
36Mb SigmaCIO DDR-II Burst of 4 SRAM 4M X 9 DDR SRAM, 0.45 ns, PBGA165
36Mb SigmaCIO DDR-II Burst of 4 SRAM 1M X 36 DDR SRAM, 0.5 ns, PBGA165
36Mb SigmaCIO DDR-II Burst of 4 SRAM 2M X 18 DDR SRAM, PBGA165
|
GSI Technology, Inc.
|
