| PART |
Description |
Maker |
| 2SA1011 2SA1011D |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-220AB
POWER TRANSISTORS(1.5A/160V/25W)
POWER TRANSISTORS(1.5A,160V,25W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| 2SD1918TLQ |
Power Transistor (160V , 1.5A)
|
Rohm
|
| DS1339U-33 DS1339U-33_ DS1339 DS1339C-2 DS1339C-2_ |
I2C Serial Real-Time Clock
TRANS NPN BIPOL DUAL 160V SOT363
TRANS NPN DARL 40V SMD SOT-23
TRANSISTOR, NPN, SWITCHING , GENERAL PURPOSE, 3-PIN SOT-23
TRANS NPN 160V 350MW SMD SOT-23
|
MAXIM - Dallas Semiconductor
DALLAS[Dallas Semiconductor]
Dallas Semiconducotr
http://
|
| ZXTN5551GTA ZXTN5551GTC ZXTN5551G |
160V, SOT223, NPN high voltage transistor
|
Diodes Incorporated
Zetex Semiconductors
|
| 2SA1942O 2SA1942 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 12A I(C) | TO-264AA
|
TOSHIBA
|
| STRS6707 STR-S6707 STR-S6708 STR-S6709 TRS6707 STR |
OFF-LINE SWITCHING REGULATORS - WITH BIPOLAR SWITCHING TRANSISTOR
OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR
OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR
Off-Line Switching Regulator With Bipolar Switching Transistor(峰值输出电5A，输出功率直20W50V输出，带双极开关晶体管的脱线开关稳压器)
Off-Line Switching Regulator With Bipolar Switching Transistor(峰值输出电2A，输出功率直20W50V输出，带双极开关晶体管的脱线开关稳压器)
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
|
ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
|
| TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm
Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm
Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC
Analog IC 模拟IC
|
Bourns, Inc.
|
| CT90AM-18 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
INSULATED GATE BIPOLAR TRANSISTOR
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CSA1220AO CSA1220AY CSA1220AR |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.2A I(C) | TO-126 晶体管|晶体管|进步党| 160V五（巴西）总裁| 1.2AI（丙）|26
|
Electronic Theatre Controls, Inc.
|
| BUK9840-55 |
Aluminum Snap-In Capacitor; Capacitance: 330uF; Voltage: 160V; Case Size: 20x30 mm; Packaging: Bulk
TrenchMOS transistor Logic level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BUK9514-55 |
Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 160V; Case Size: 25x35 mm; Packaging: Bulk
TrenchMOS transistor Logic level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
