PART |
Description |
Maker |
BUK553-100A BUK553-100B BUK553-100A/B |
TRANSISTOR UNIVERSAL MOSFET SOT PowerMOS transistor Logic level FET 12 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
2SK956 2SK1010 2SK1507-01 2SK958 2SK1547-01 2SK138 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-247 晶体管| MOSFET的| N沟道| 800V的五(巴西)直| 4A条(丁)|47 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 6A条(丁)|20 TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-247 MOSFET transistors TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 9A I(D) | TO-247 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset From old datasheet system TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,9A I(D),TO-220 TRANSISTOR|MOSFET|N-CHANNEL|500VV(BR)DSS|6AI(D)|TO-220
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,9A I(D),TO-247
|
Toshiba, Corp. Mallory Sonalert Products, Inc. Fuji Semiconductors, Inc.
|
SPD02N60 SPU02N60 |
Power MOSFET SIPMO Power Transistor 2 A, 600 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Siemens Semiconductor G... Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
IRL3714L IRL3714S IRL3714 IRL3714STRR |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 36A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 20V的五(巴西)直| 36A条(丁)|63AB HEXFET? Power MOSFET Power MOSFET(Vdss=20V, Rds(on)max=20mohm, Id=36A) 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp. http:// IRF[International Rectifier]
|
IRFP040 IRF9622 IRF9612 IRFP362 IRFP343 |
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 8.4A I(D) | TO-247AC TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 1.5A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 200伏五(巴西)直| 1.5AI(四)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 20A I(D) | TO-247 TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 900MA I(D) | TO-220AB TRANSISTOR|MOSFET|P-CHANNEL|200VV(BR)DSS|1.5AI(D)|TO-220AB
TRANSISTOR|MOSFET|N-CHANNEL|50VV(BR)DSS|40AI(D)|TO-247AC
|
International Rectifier, Corp.
|
BUZ72 BUZ72SMD |
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=0.2 Ohm, 10A, NL SIPMOS Power Transistor SIPMOS Power Transistor
|
Infineon Technologies AG
|
BUZ72AL |
SIPMOS Power Transistor SIPMOS Power Transistor Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=0.25 Ohm, 9A, LL
|
INFINEON[Infineon Technologies AG]
|
IRF1407L IRF1407S IRF1407STRR |
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?) Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A) Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A) TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63AB
|
IRF[International Rectifier] International Rectifier, Corp.
|
MRF6P27160H_06 MRF6P27160H MRF6P27160HR6_06 MRF6P2 |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 2700 MHz, 35 W AVG., 28 V Single N??DMA Lateral N??hannel RF Power MOSFET
|
FREESCALE[Freescale Semiconductor, Inc] MOTOROLA
|