| PART |
Description |
Maker |
| SA8027W SA8027DH SA8027DH512 |
2.5 GHz low voltage / low power RF fractional-N/IF integer frequency synthesizer
2.5 GHz low voltage, low power RF fractional-N/IF integer frequency synthesizer 2.5 GHz的低电压，射频fractional-N/IF整数频率合成器的低功
|
Philips
NXP Semiconductors N.V.
|
| SA8016 |
2.5GHz low voltage fractional-N
|
Philips
|
| SA7016 SA7016DH |
1.3GHz low voltage fractional-N synthesizer
|
NXP Semiconductors
|
| SA7026DK |
1.3GHz low voltage fractional-N dual synthesizer.
|
Philips
|
| SA8026DH SA8026 |
2.5GHz low voltage fractional-N dual frequency synthesizer
|
PHILIPS[Philips Semiconductors]
|
| SA7026DH SA7026 |
1.3GHz low voltage fractional-N dual frequency synthesizer
|
PHILIPS[Philips Semiconductors]
|
| BF1012S Q62702-F1627 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SPIRIT1QTR |
Low data rate, low power sub-1GHZ transceiver
|
List of Unclassifed Manufacturers
|
| D2231UK D2229UK D2230 D2230UK D2231 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2202UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D2220UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
